Cypress CY7C1443AV33, CY7C1441AV33, CY7C1447AV33 Maximum Ratings, Operating Range, Range Ambient

CY7C1441AV33

CY7C1443AV33,CY7C1447AV33

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested.

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.3V to +4.6V
Supply Voltage on VDDQ Relative to GND		–0.3V to +VDD
DC Voltage Applied to Outputs
in Tri-State	–0.5V to VDDQ + 0.5V

DC Input Voltage		–0.5V to VDD + 0.5V
Current into Outputs (LOW)			20 mA
Static Discharge Voltage			>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current			>200 mA
Operating Range
Range	Ambient	VDD	VDDQ
	Temperature
Commercial	0°C to +70°C	3.3V –5%/+10%	2.5V –5%
			to VDD
Industrial	–40°C to +85°C

Electrical Characteristics Over the Operating Range[15, 16]

DC Electrical Characteristics Over the Operating Range

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

3.135

3.6

V

VDDQ

IO Supply Voltage

for 3.3V IO

3.135

VDD

V

for 2.5V IO

2.375

2.625

V

VOH

Output HIGH Voltage

for 3.3V IO, IOH = –4.0 mA

2.4

V

for 2.5V IO, IOH = –1.0 mA

2.0

V

VOL

Output LOW Voltage

for 3.3V IO, IOL = 8.0 mA

0.4

V

for 2.5V IO, IOL = 1.0 mA

0.4

V

VIH

Input HIGH Voltage[15]

for 3.3V IO

2.0

VDD + 0.3V

V

for 2.5V IO

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage[15]

for 3.3V IO

–0.3

0.8

V

for 2.5V IO

–0.3

0.7

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

–5

5

μA

except ZZ and MODE

Input Current of MODE

Input = VSS

–30

μA

Input = VDD

5

μA

Input Current of ZZ

Input = VSS

–5

μA

Input = VDD

30

μA

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

–5

5

μA

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

7.5-ns cycle, 133 MHz

310

mA

Current

f = fMAX = 1/tCYC

10-ns cycle, 100 MHz

290

mA

ISB1

Automatic CE

Max. VDD, Device Deselected,

All Speeds

180

mA

Power down

VIN

≥ VIH or VIN ≤ VIL, f = fMAX,

Current—TTL Inputs

inputs switching

I

Automatic CE

Max. V

, Device Deselected,

All speeds

120

mA

SB2

Power down

V

≥ V DD – 0.3V or V

≤ 0.3V,

Current—CMOS Inputs

IN

DD

IN

f = 0, inputs static

I

Automatic CE

Max. V

, Device Deselected,

All Speeds

180

mA

SB3

Power down

V

≥ V DD – 0.3V or V

IN

≤ 0.3V,

Current—CMOS Inputs

IN

DDQ

f = fMAX, inputs switching

ISB4

Automatic CE

Max. VDD, Device Deselected,

All Speeds

135

mA

Power down

VIN

≥ VDD

– 0.3V or VIN ≤ 0.3V,

Current—TTL Inputs

f = 0, inputs static

Notes

15.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

16.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05357 Rev. *G Page 19 of 31

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