CY7C1380C
CY7C1382C
Document #: 38-05237 Rev. *D Page 24 of 36
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on VDD Relative to GND........–0.3V to +4.6V
DC Voltage Applied to Outputs
in Tri-State...........................................–0.5V to VDDQ + 0.5V
DC Input Voltage....................................–0.5V to VDD + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range Ambient
Temper atur e VDD VDDQ
Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
to VDD
Industrial -40°C to +85°C
Electrical Characteristics Over the Operating Range[12, 13]
Parameter Description Test Conditions Min. Max. Unit
VDD Power Supply Voltage 3.135 3.6 V
VDDQ I/O Supply Voltage VDDQ = 3.3V 3.135 VDD V
VDDQ = 2.5V 2.375 2.625 V
VOH Output HIGH Voltage VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA 2.4 V
VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA 2.0 V
VOL Output LOW Voltage VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA 0.4 V
VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage[12] VDDQ = 3.3V 2.0 VDD + 0.3V V
VDDQ = 2.5V 1.7 VDD + 0.3V V
VIL Input LOW Voltage[12] VDDQ = 3.3V –0.3 0.8 V
VDDQ = 2.5V –0.3 0.7 V
IXInput Load Current ex-
cept ZZ and MODE GND ≤ VI ≤ VDDQ –5 5µA
Input Current of MODE Input = VSS –30 µA
Input = VDD 5µA
Input Current of ZZ Input = VSS –30 µA
Input = VDD 5µA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5µA
IDD VDD Operating Supply
Current VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4.0-ns cycle, 250 MHz 350 mA
4.4-ns cycle, 225 MHz 325 mA
5.0-ns cycle, 200 MHz 300 mA
6.0-ns cycle, 167 MHz 275 mA
7.5-ns cycle, 133 MHz 245 mA
ISB1 Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
4.0-ns cycle, 250 MHz 120 mA
4.4-ns cycle, 225 MHz 110 mA
5.0-ns cycle, 200 MHz 100 mA
6.0-ns cycle, 167 MHz 90 mA
7.5-ns cycle, 133 MHz 85 mA
ISB2 Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN≤ 0.3V or VIN > VDDQ – 0.3V,
f = 0
All speeds 70 mA
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