CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

the TAP controller, it will directly control the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it will enable the output buffers to drive the output bus. When LOW, this bit will place the output bus into a High-Z condition.

This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell will latch into the preload

register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state.

Reserved

These instructions are not implemented but are reserved for future use. Do not use these instructions.

TAP Timing

1

2

Test Clock

 

(TCK)

tTH

 

tTMSS

tTMSH

Test Mode Select

 

(TMS)

 

tTDIS

tTDIH

Test Data-In

 

(TDI)

 

Test Data-Out

 

(TDO)

 

3

tTL tCYC

456

tTDOV

tTDOX

DON’T CARE

UNDEFINED

TAP AC Switching Characteristics

Over the Operating Range [10, 11]

Parameter

Description

Min.

Max.

Unit

Clock

 

 

 

 

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH time

20

 

ns

tTL

TCK Clock LOW time

20

 

ns

Output Times

 

 

 

 

 

 

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

10

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

Setup Times

 

 

 

 

 

 

 

 

 

tTMSS

TMS Setup to TCK Clock Rise

5

 

ns

tTDIS

TDI Setup to TCK Clock Rise

5

 

ns

tCS

Capture Setup to TCK Rise

5

 

ns

Hold Times

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

5

 

ns

tTDIH

TDI Hold after Clock Rise

5

 

ns

tCH

Capture Hold after Clock Rise

5

 

ns

Notes

10.tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.

11.Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.

Document #: 38-05547 Rev. *E

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Cypress CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, CY7C1383FV25 manual TAP Timing, TAP AC Switching Characteristics

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

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In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.