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Cypress CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, CY7C1383FV25 manual Write Cycle Timing 25, Adsc

Models: CY7C1383DV25 CY7C1381FV25 CY7C1381DV25 CY7C1383FV25

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CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

Timing Diagrams (continued)

Write Cycle Timing [25, 26]

	tCYC
CLK	t CL
t CH	t CL

tADS tADH

ADSP

tADS tADH

ADSC

tAS tAH

ADDRESS A1 A2

Byte write signals are ignored for ﬁrst cycle when

ADSP initiates burst

BWE,

BW X

t t

WES WEH

ADSC extends burst

tADS tADH

tWES tWEH

tCES tCEH

ADV

Data in (D)

High-Z

Data Out (Q)

tOEHZ

t DS t DH

D(A1)

tADVS tADVH

ADV suspends burst

D(A2)

D(A2 + 1)

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

D(A3 + 2)

BURST READ

Single WRITE

BURST WRITE
DON’T CARE	UNDEFINED

Extended BURST WRITE

Note

26. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW and BWX LOW.

Document #: 38-05547 Rev. *E

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Cypress CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, CY7C1383FV25 manual Write Cycle Timing 25, Adsc

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.

Contents

Selection Guide Functional Description Features133 MHz 100 MHz Unit Cypress Semiconductor Corporation Logic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x Pin Configurations Pin Tqfp Pinout 3 Chip Enable CY7C1381DV25 512K xCY7C1383DV25 Mbit x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Pin Definitions Name DescriptionByte write select inputs, active LOW. Qualified with Functional Overview ZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDAddress = GND Used Address Cycle Description Function CY7C1381DV25/CY7C1381FV25 Truth Table for Read/Write 4DQPB, Dqpa DQPC, Dqpa TAP Controller State Diagram TAP Controller Block DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass Register TAP Timing TAP AC Switching Characteristics 5V TAP AC Output Load Equivalent 5V TAP AC Test ConditionsIdentification Register Definitions Scan Register Sizes Ball BGA Boundary Scan Order 13 Identification CodesInstruction Code Description Bit # Ball ID A11 Maximum Ratings Electrical CharacteristicsOperating Range Range Thermal Resistance CapacitanceAC Test Loads and Waveforms Package Switching Characteristics Parameter Description 133 MHz 100 MHz Unit MinMin Max Read Cycle Timing Timing Diagrams Adsc Write Cycle Timing 25 ADV Read/Write Cycle Timing 25, 27 DON’T Care ZZ Mode Timing 29 Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package Diagrams Ball BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

Timing Diagrams (continued)

Write Cycle Timing [25, 26]

ADSC

ADV

DON’T CARE

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications