Manuals / Cypress / Computer Equipment / Computer Hardware

Cypress CY7C1381DV25, CY7C1383DV25, CY7C1381FV25, CY7C1383FV25 Read/Write Cycle Timing 25, 27, Adv

Models: CY7C1383DV25 CY7C1381FV25 CY7C1381DV25 CY7C1383FV25

1 28

Download 28 pages 41.6 Kb

Page 22

Image 22

CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

Timing Diagrams (continued)

Read/Write Cycle Timing [25, 27, 28]

tCYC

CLK

tCH tCL

tADS tADH

ADSP

ADSC

tAS tAH

ADDRESS

tWES t WEH

BWE, BW X

tCES tCEH

A5A6

CE
ADV
OE
Data In (D)	High-Z	t
		OEHZ
Data Out (Q)	Q(A1)	Q(A2)
	Back-to-Back READs

tDS	tDH
	tOELZ

D(A3)
tCDV
Q(A4)	Q(A4+1)	Q(A4+2)	Q(A4+3)
Single WRITE	BURST READ
DON’T CARE	UNDEFINED

D(A5) D(A6)

Back-to-Back

WRITEs

Notes

27.The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.

28.GW is HIGH.

Document #: 38-05547 Rev. *E

Page 22 of 28

[+] Feedback

Page 22

Image 22

Cypress CY7C1381DV25, CY7C1383DV25, CY7C1381FV25, CY7C1383FV25 manual Read/Write Cycle Timing 25, 27, Adv

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.

Contents

133 MHz 100 MHz Unit FeaturesSelection Guide Functional Description Cypress Semiconductor Corporation Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x Logic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x CY7C1381DV25 512K x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1383DV25 Mbit x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Name Description Pin DefinitionsByte write select inputs, active LOW. Qualified with Functional Overview Address Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics = GND Address Cycle Description Used DQPB, Dqpa Truth Table for Read/Write 4Function CY7C1381DV25/CY7C1381FV25 DQPC, Dqpa TAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag Bypass Register TAP Instruction Set TAP AC Switching Characteristics TAP Timing Identification Register Definitions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Scan Register Sizes Instruction Code Description Identification CodesBall BGA Boundary Scan Order 13 Bit # Ball ID A11 Operating Range Electrical CharacteristicsMaximum Ratings Range AC Test Loads and Waveforms CapacitanceThermal Resistance Package Parameter Description 133 MHz 100 MHz Unit Min Switching CharacteristicsMin Max Timing Diagrams Read Cycle Timing Write Cycle Timing 25 Adsc Read/Write Cycle Timing 25, 27 ADV ZZ Mode Timing 29 DON’T Care Ordering Information Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Ball BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Date Orig. Description of Change Document History

CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

Timing Diagrams (continued)

Read/Write Cycle Timing [25, 27, 28]

ADV

DON’T CARE

UNDEFINED

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications