CY7C1381DV25, CY7C1381FV25

 

 

 

 

 

CY7C1383DV25, CY7C1383FV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

Name

IO

Description

 

 

 

 

 

MODE

Input-Static

Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD or

 

 

 

 

 

left floating selects interleaved burst sequence. This is a strap pin and must remain static

 

 

 

 

 

during device operation. Mode pin has an internal pull up.

 

 

 

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

VDDQ

IO Power Supply

Power supply for the IO circuitry.

 

VSS

Ground

Ground for the core of the device.

 

VSSQ

IO Ground

Ground for the IO circuitry.

 

TDO

JTAG serial output

Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG

 

 

Synchronous

feature is not used, this pin can be left unconnected. This pin is not available on TQFP

 

 

 

 

 

packages.

 

 

 

 

 

TDI

JTAG serial input

Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature

 

 

Synchronous

is not used, this pin can be left floating or connected to VDD through a pull up resistor. This

 

 

 

 

 

pin is not available on TQFP packages.

 

 

 

 

 

TMS

JTAG serial input

Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature

 

 

Synchronous

is not used, this pin can be disconnected or connected to VDD. This pin is not available on

 

 

 

 

 

TQFP packages.

 

 

 

 

 

TCK

JTAG-

Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be

 

 

Clock

connected to VSS. This pin is not available on TQFP packages.

 

NC, NC/(36M,

-

 

 

No Connects. Not internally connected to the die. 36M, 72M, 144M, 288M, 576M, and 1G

 

72M, 144M,

 

 

 

are address expansion pins and are not internally connected to the die.

 

288M, 576M,

 

 

 

 

 

1G)

 

 

 

 

 

 

 

 

 

VSS/DNU

Ground/DNU

This pin can be connected to ground or can be left floating.

 

Functional Overview

All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCDV) is 6.5 ns (133 MHz device).

The CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/ CY7C1383FV25 supports secondary cache in systems using a linear or interleaved burst sequence. The interleaved burst order supports Pentiumand i486™ processors. The linear burst sequence is suited for processors that use a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the processor address strobe (ADSP) or the controller address strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access.

Byte write operations are qualified with the byte write enable (BWE) and byte write select (BWX) inputs. A global write enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self timed write circuitry.

Three synchronous chip selects (CE1, CE2, CE3 [2]) and an asynchronous output enable (OE) provide for easy bank

selection and output tri-state control. ADSP is ignored if CE1 is HIGH.

Single Read Accesses

A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 [2] are all

asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter and/or control logic, and presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs with a maximum to tCDV after clock rise. ADSP is ignored if CE1 is HIGH.

Single Write Accesses Initiated by ADSP

This access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, CE3 [2] are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BWE, and BWX) are ignored during this first clock cycle. If the write inputs are asserted active (see Truth Table for Read/Write [4, 9] on page 10 for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. Byte writes are allowed. All IOs are tri-stated during a byte write. As this is a common IO device, the asynchronous OE input signal must be deserted

Document #: 38-05547 Rev. *E

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Cypress CY7C1383FV25, CY7C1383DV25, CY7C1381FV25, CY7C1381DV25 manual Functional Overview

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.