CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

2.5V TAP AC Test Conditions

Input pulse levels

VSS to 2.5V

Input rise and fall time

1 ns

Input timing reference levels

1.25V

Output reference levels

1.25V

Test load termination supply voltage

1.25V

2.5V TAP AC Output Load Equivalent

1.25V

50

TDO

ZO= 50

 

 

 

 

 

20pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted) [12]

Parameter

Description

 

Test Conditions

Min.

Max.

Unit

VOH1

Output HIGH Voltage

IOH = –1.0 mA, VDDQ = 2.5V

2.0

 

V

VOH2

Output HIGH Voltage

IOH = –100 µA, VDDQ = 2.5V

2.1

 

V

VOL1

Output LOW Voltage

IOL = 8.0 mA, VDDQ = 2.5V

 

0.4

V

VOL2

Output LOW Voltage

IOL = 100 µA

 

VDDQ = 2.5V

 

0.2

V

VIH

Input HIGH Voltage

 

 

VDDQ = 2.5V

1.7

VDD + 0.3

V

VIL

Input LOW Voltage

 

 

VDDQ = 2.5V

–0.3

0.7

V

IX

Input Load Current

GND < VIN < VDDQ

 

–5

5

µA

Identification Register Definitions

Instruction Field

CY7C1381DV25/

CY7C1383DV25/

Description

CY7C1381FV25

CY7C1383FV25

 

(512K x 36)

(1 Mbit x 18)

 

Revision Number (31:29)

000

000

Describes the version number

 

 

 

 

Device Depth (28:24)

01011

01011

Reserved for internal use.

 

 

 

 

Device Width (23:18) 119-BGA

101001

101001

Defines the memory type and architecture

 

 

 

 

Device Width (23:18) 165-FBGA

000001

000001

Defines the memory type and architecture

 

 

 

 

Cypress Device ID (17:12)

100101

010101

Defines the width and density

 

 

 

 

Cypress JEDEC ID Code (11:1)

00000110100

00000110100

Allows unique identification of SRAM vendor

 

 

 

 

ID Register Presence Indicator (0)

1

1

Indicates the presence of an ID register

 

 

 

 

Scan Register Sizes

Register Name

Bit Size (x36)

Bit Size (x18)

Instruction Bypass

3

3

 

 

 

Bypass

1

1

 

 

 

ID

32

32

 

 

 

Boundary Scan Order (119-ball BGA package)

85

85

 

 

 

Boundary Scan Order (165-ball FBGA package)

89

89

 

 

 

Note

12. All voltages referenced to VSS (GND).

Document #: 38-05547 Rev. *E

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Cypress CY7C1381DV25 5V TAP AC Test Conditions, 5V TAP AC Output Load Equivalent, Identification Register Definitions

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.