ZZ Mode Timing 29, DON’T Care | Cypress CY7C1383FV25, CY7C1383DV25

CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25

Timing Diagrams (continued)

ZZMode Timing [29, 30]

CLK

t ZZ

t ZZI

ISUPPLY

I DDZZ

ALL INPUTS (except ZZ)

Outputs (Q)

High-Z

DON’T CARE

t ZZREC

t RZZI

DESELECT or READ Only

Notes

29.Device must be deselected when entering ZZ sleep mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.

30.DQs are in high-Z when exiting ZZ sleep mode.

Document #: 38-05547 Rev. *E

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Cypress CY7C1383FV25, CY7C1383DV25, CY7C1381FV25, CY7C1381DV25 manual ZZ Mode Timing 29, DON’T Care

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.

Contents

Cypress Semiconductor Corporation FeaturesSelection Guide Functional Description 133 MHz 100 MHz Unit Logic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x CY7C1383DV25 Mbit x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381DV25 512K x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Address Used Address Cycle Description DQPC, Dqpa Truth Table for Read/Write 4Function CY7C1381DV25/CY7C1381FV25 DQPB, Dqpa Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram TAP Instruction Set Bypass Register TAP Timing TAP AC Switching Characteristics Scan Register Sizes 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Identification Register Definitions Bit # Ball ID Identification CodesBall BGA Boundary Scan Order 13 Instruction Code Description A11 Range Electrical CharacteristicsMaximum Ratings Operating Range Package CapacitanceThermal Resistance AC Test Loads and Waveforms Min Max Switching CharacteristicsParameter Description 133 MHz 100 MHz Unit Min Read Cycle Timing Timing Diagrams Adsc Write Cycle Timing 25 ADV Read/Write Cycle Timing 25, 27 DON’T Care ZZ Mode Timing 29 Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package Diagrams Ball BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change