Epson S1C63558 7.5 Oscillation Characteristics, OSC1 crystal oscillation circuit, OSC3 ceramic oscillation circuit

CHAPTER 7: ELECTRICAL CHARACTERISTICS

7.5 Oscillation Characteristics

The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the following characteristics as reference values.

OSC1 crystal oscillation circuit

Unless otherwise specified:

VDD=3.0V, VSS=0V, fOSC1=32.768kHz, CG=25pF, CD=built-in, Ta=-20 to 70°C

Item	Symbol	Condition	Min.	Typ.	Max.	Unit
Oscillation start voltage	Vsta	tsta≤3sec (VDD)	2.2			V
Oscillation stop voltage	Vstp	tstp≤10sec (VDD)	2.2			V
Built-in capacitance (drain)	CD	Including the parasitic capacitance inside the IC (in chip)		14		pF
Frequency/voltage deviation	∆f/∆V	VDD=2.2 to 5.5V			10	ppm
Frequency/IC deviation	∆f/∆IC		-10		10	ppm
Frequency adjustment range	∆f/∆CG	CG=5 to 25pF	10	20		ppm
Harmonic oscillation start voltage	Vhho	CG=5pF (VDD)	5.5			V
Permitted leak resistance	Rleak	Between OSC1 and VSS	200			MΩ

OSC3 ceramic oscillation circuit

Unless otherwise specified:

VDD=3.0V, VSS=0V, Ceramic oscillator: 3.58MHz, CGC=CDC=30pF, Ta=-20 to 70°C

Item	Symbol	Condition	Min.	Typ.	Max.	Unit
Oscillation start voltage	Vsta	(VDD)	2.2			V
Oscillation start time	tsta	VDD=2.2 to 5.5V			5	ms
Oscillation stop voltage	Vstp	(VDD)	2.2			V

S1C63558 TECHNICAL MANUAL EPSON 163