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NEC PD75P308 PROGRAM MEMORY WRITE TIMING, PROGRAM MEMORY READ TIMING

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PD75P308

VPP

VDD

VDD+1

VDD

MD0

MD1

MD2

MD3

VPP

VDD

Data input Data

output Data input

Data input

tVPS

tVDS

ttDS tDH

ttDV tDF tDS tAH tAS

tOPW

tM1RtPW

tPCR tM1S tM1H

tM3S tM3H

tVPS

tVDS

ttDV

tXH

tXL tHAD

tDAD

Data output Data output

tDFR

tM3HR

tPCR

tM3SR

tXH

tXL

IOH

MOS

P40-P43

P50-P53

VPP

VDD

VDD+1

VDD

MD0

MD1

MD2

MD3

VPP

VDD

P40-P43

P50-P53

PROGRAM MEMORY WRITE TIMINGPROGRAM MEMORY READ TIMING

Contents

Main DATA SHEET MOS INTEGRATED CIRCUIT PIN CONFIGURATION PD75P308GF-3B9 PD75P308K PD75P308 BLOCK DIAGRAM Page PD75P308 1. PIN FUNCTIONS 1.1 PORT PINS 1.2 NON PORT PINS Page PD75P308 TYPE F P.U.R. : PullUp Resistor TYPE GA TYPE GC Page 2. DIFFERENCES BETWEEN PD75P308 AND Note: PD75P308 and Table 2-1 Differences between 3. WRITING AND VERIFYING PROM (PROGRAM MEMORY) Page Page Note 1: Remarks: 4. ELECTRICAL SPECIFICATIONS Effective value = Peak value x Duty *1: ABSOLUTE MAXIMUM RATINGS Page Page DC CHARACTERISTICS (Ta = -10 to +70C, VDD = 5V 5%) AC CHARACTERISTICS (Ta = -10 to + 70C, VDD = 5V 5%) Operation Other Than Serial Transfer SERIAL TRANSFER OPERATION TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: internal clock output) TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: external clock input) SBI MODE (SCK: internal clock output (master)) SBI MODE (SCK: external clock output (master)) AC TIMING TEST POINT (excluding X1 and XT1 inputs) CLOCK TIMING TI0 TIMING SERIAL TRANSFER TIMING THREE-LINE SERIAL I/O MODE: TWO-LINE SERIAL I/O MODE: SERIAL TRANSFER TIMING BUS RELEASE SIGNAL TRANSFER INTERRUPT INPUT TIMING t RESET INPUT TIMING COMMAND SIGNAL TRANSFER LOW-VOLTAGE DATA RETENTION CHARACTERISTICS OF DATA MEMORY IN STOP MODE (Ta = -10 to +70C) DATA RETENTION TIMING (releasing STOP mode by RESET) DATA RETENTION TIMING (standby release signal: releasing STOP mode by interrupt) *1: These symbols are the corresponding AC PROGRAMMING CHARACTERISTICS (Ta = 255C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) DC PROGRAMMING CHARACTERISTICS (Ta = 25 5C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) PROGRAM MEMORY WRITE TIMING PROGRAM MEMORY READ TIMING 5. PACKAGE DRAWINGS 80 PIN PLASTIC QFP (1420) 80 PIN CERAMIC WQFN PD75P308 6. RECOMMENDED SOLDERING CONDITIONS *: Table 6-1 Soldering Conditions APPENDIX A. DEVELOPMENT TOOLS PROM writing tools Page GENERAL NOTES ON CMOS DEVICES 1 STATIC ELECTRICITY (ALL MOS DEVICES) 2 PROCESSING OF UNUSED PINS (CMOS DEVICES ONLY) 3 STATUS BEFORE INITIALIZATION (ALL MOS DEVICES) [MEMO]