NEC PD75P308 Note 1:, Remarks:

µ

PD75P308

14

3.4 ERASURE (

µ

PD75P308K ONLY)

The contents of the data programmed to the

µ

PD75P308 can be erased by exposing the window of the

program memory to ultraviolet rays.

The wavelength of the ultraviolet rays used to erase the contents is about 250 nm, and the quantity of the

ultraviolet rays necessary for complete erasure is 15 W.s/cm2 (= ultraviolet ray intensity x erasure time).

When a commercially available ultraviolet ray lamp (wavelength: 254 nm, intensity: 12 mW/cm2) is used,

about 15 to 20 minutes is required.

Note 1:

The contents of the program memory may be erased when the

µ

PD75P308 is exposed for a long

time to direct sunlight or the light of fluorescent lamps. To protect the contents from being

erased, mask the window of the program memory with the light-opaque film supplied as an

accessory with the UV EPROM products.

2:

To erase the memory contents, the distance between the ultraviolet ray lamp and the

µ

PD75P308

should be 2.5 cm or less.

Remarks:

The time required for erasure changes depending on the degradation of the ultraviolet ray

lamp and the surface condition (dirt) of the window of the program memory.

Contents

Main DATA SHEET MOS INTEGRATED CIRCUIT PIN CONFIGURATION PD75P308GF-3B9 PD75P308K PD75P308 BLOCK DIAGRAM Page PD75P308 1. PIN FUNCTIONS 1.1 PORT PINS 1.2 NON PORT PINS Page PD75P308 TYPE F P.U.R. : PullUp Resistor TYPE GA TYPE GC Page 2. DIFFERENCES BETWEEN PD75P308 AND Note: PD75P308 and Table 2-1 Differences between 3. WRITING AND VERIFYING PROM (PROGRAM MEMORY) Page Page Note 1: Remarks: 4. ELECTRICAL SPECIFICATIONS Effective value = Peak value x Duty *1: ABSOLUTE MAXIMUM RATINGS Page Page DC CHARACTERISTICS (Ta = -10 to +70C, VDD = 5V 5%) AC CHARACTERISTICS (Ta = -10 to + 70C, VDD = 5V 5%) Operation Other Than Serial Transfer SERIAL TRANSFER OPERATION TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: internal clock output) TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: external clock input) SBI MODE (SCK: internal clock output (master)) SBI MODE (SCK: external clock output (master)) AC TIMING TEST POINT (excluding X1 and XT1 inputs) CLOCK TIMING TI0 TIMING SERIAL TRANSFER TIMING THREE-LINE SERIAL I/O MODE: TWO-LINE SERIAL I/O MODE: SERIAL TRANSFER TIMING BUS RELEASE SIGNAL TRANSFER INTERRUPT INPUT TIMING t RESET INPUT TIMING COMMAND SIGNAL TRANSFER LOW-VOLTAGE DATA RETENTION CHARACTERISTICS OF DATA MEMORY IN STOP MODE (Ta = -10 to +70C) DATA RETENTION TIMING (releasing STOP mode by RESET) DATA RETENTION TIMING (standby release signal: releasing STOP mode by interrupt) *1: These symbols are the corresponding AC PROGRAMMING CHARACTERISTICS (Ta = 255C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) DC PROGRAMMING CHARACTERISTICS (Ta = 25 5C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) PROGRAM MEMORY WRITE TIMING PROGRAM MEMORY READ TIMING 5. PACKAGE DRAWINGS 80 PIN PLASTIC QFP (1420) 80 PIN CERAMIC WQFN PD75P308 6. RECOMMENDED SOLDERING CONDITIONS *: Table 6-1 Soldering Conditions APPENDIX A. DEVELOPMENT TOOLS PROM writing tools Page GENERAL NOTES ON CMOS DEVICES 1 STATIC ELECTRICITY (ALL MOS DEVICES) 2 PROCESSING OF UNUSED PINS (CMOS DEVICES ONLY) 3 STATUS BEFORE INITIALIZATION (ALL MOS DEVICES) [MEMO]