NEC PD75P308 PD75P308

µ

PD75P308

30

6. RECOMMENDED SOLDERING CONDITIONS

It is recommended that

µ

PD75P308 be soldered under the following conditions.

For details on the recommended soldering conditions, refer to Information Document "Semiconductor

Devices Mounting Manual" (IEI-616).

The soldering methods and conditions are not listed here, consult NEC.

Table 6-1 Soldering Conditions

µ

PD75P308GF-3B9: 80-pin plastic QFP (14 x 20 mm)

Soldering Method Soldering Conditions Symbol for Recommended

Condition

Wave Soldering Soldering bath temperature: 260°C max., WS60-162-1

time: 10 seconds max., number of times: 1,

pre-heating temperature: 120°C max. (package surface

temperature), maximum number of days: 2 days*,

(beyond this period, 16 hours of pre-baking is required

at 125°C).

Infrared Reflow Package peak temperature: 230°C, IR30-162-1

time: 30 seconds max. (210°C min.),

number of times: 1, maximum number of days: 2 days*

(beyond this period, 16 hours of pre-baking is required

at 125°C)

VPS Package peak temperature: 215°C, VP15-162-1

time: 40 seconds max. (200°C min.),

number of times: 1, maximum number of days: 2 days*

(beyond this period, 16 hours of pre-baking is required

at 125°C)

Pin Partial Heating Pin temperature: 300°C max., —

time: 3 seconds max. (per side)

*:

Number of days after unpacking the dry pack. Storage conditions are 25°C and 65%RH max.

Caution: Do not use two or more soldering methods in combination (except the pin partial heating

method).

★

A model that can be soldered under the more stringent conditions (infrared reflow peak

temperature: 235°C, number of times: 2, and an extended number of days) is also available.

For details, consult NEC.

Notice

Contents

Main DATA SHEET MOS INTEGRATED CIRCUIT PIN CONFIGURATION PD75P308GF-3B9 PD75P308K PD75P308 BLOCK DIAGRAM Page PD75P308 1. PIN FUNCTIONS 1.1 PORT PINS 1.2 NON PORT PINS Page PD75P308 TYPE F P.U.R. : PullUp Resistor TYPE GA TYPE GC Page 2. DIFFERENCES BETWEEN PD75P308 AND Note: PD75P308 and Table 2-1 Differences between 3. WRITING AND VERIFYING PROM (PROGRAM MEMORY) Page Page Note 1: Remarks: 4. ELECTRICAL SPECIFICATIONS Effective value = Peak value x Duty *1: ABSOLUTE MAXIMUM RATINGS Page Page DC CHARACTERISTICS (Ta = -10 to +70C, VDD = 5V 5%) AC CHARACTERISTICS (Ta = -10 to + 70C, VDD = 5V 5%) Operation Other Than Serial Transfer SERIAL TRANSFER OPERATION TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: internal clock output) TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: external clock input) SBI MODE (SCK: internal clock output (master)) SBI MODE (SCK: external clock output (master)) AC TIMING TEST POINT (excluding X1 and XT1 inputs) CLOCK TIMING TI0 TIMING SERIAL TRANSFER TIMING THREE-LINE SERIAL I/O MODE: TWO-LINE SERIAL I/O MODE: SERIAL TRANSFER TIMING BUS RELEASE SIGNAL TRANSFER INTERRUPT INPUT TIMING t RESET INPUT TIMING COMMAND SIGNAL TRANSFER LOW-VOLTAGE DATA RETENTION CHARACTERISTICS OF DATA MEMORY IN STOP MODE (Ta = -10 to +70C) DATA RETENTION TIMING (releasing STOP mode by RESET) DATA RETENTION TIMING (standby release signal: releasing STOP mode by interrupt) *1: These symbols are the corresponding AC PROGRAMMING CHARACTERISTICS (Ta = 255C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) DC PROGRAMMING CHARACTERISTICS (Ta = 25 5C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) PROGRAM MEMORY WRITE TIMING PROGRAM MEMORY READ TIMING 5. PACKAGE DRAWINGS 80 PIN PLASTIC QFP (1420) 80 PIN CERAMIC WQFN PD75P308 6. RECOMMENDED SOLDERING CONDITIONS *: Table 6-1 Soldering Conditions APPENDIX A. DEVELOPMENT TOOLS PROM writing tools Page GENERAL NOTES ON CMOS DEVICES 1 STATIC ELECTRICITY (ALL MOS DEVICES) 2 PROCESSING OF UNUSED PINS (CMOS DEVICES ONLY) 3 STATUS BEFORE INITIALIZATION (ALL MOS DEVICES) [MEMO]