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NEC PD75P308 2. DIFFERENCES BETWEEN , PD75P308 AND , PD75P308 and , Table 2-1 Differences between , PD75308

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µ

PD75P308

10

Item

µ

PD75P308K

µ

PD75P308GF

µ

PD75308GF

• EPROM • PROM (one-time model) • Mask ROM

• 0000H-1F7FH • 0000H-1F7FH • 0000H-1F7FH

• 8064 x 8 bits • 8064 x 8 bits • 8064 x 8 bits

Pull-up Resistor Ports 4, 5

Dividing Resistor for LCD

Driving Power Supply

Pins 50-53 P30/MD0-P33/MD3 P30-P33

Pin 57 VPP NC

Current dissipations and operating temperature ranges differ between

µ

PD75P308 and

µ

PD75308. For detail, refer to the specification documents of each mode.

Operating Voltage Range 5V±5% 2.7-6.0V

80-pin ceramic WQFN

(LCC w/window)

Noise immunity and noise radiation differ because circuit scale and mask layout are

different.

2. DIFFERENCES BETWEEN

µ

PD75P308 AND

µ

PD75308

The

µ

PD75P308 is a model of the

µ

PD75308 and is equipped with a PROM instead of a mask ROM.

Programs can be rewritten to the PROM of the

µ

PD75P308. Table 2-1 shows the differences between the

µ

PD75P308 and

µ

PD75308. You should fully consider these differences when you debug or produce your

application system on an experimental basis by using the PROM model, and then proceed to mass-produce

the system by using the mask ROM model.

For the details of the CPU and the internal hardware, refer to

µ

PD75308 User's Manual (IEM-5016).

Table 2-1 Differences between

µ

PD75P308 and

µ

PD75308

Program Memory

★

★

Note:

The noise immunity and noise radiation differ between the PROM and mask ROM models. To replace

the PROM model with the mask ROM model in the course of experimental production to mass

production, evaluate your system by using the CS mode (not ES model) of the mask ROM model.

Pin Connection

Not provided Mask option

Not provided Mask option

Electrical Specifications

Package

Others

80-pin plastic QFP (14 x 20 mm)

★

Contents

Main DATA SHEET MOS INTEGRATED CIRCUIT PIN CONFIGURATION PD75P308GF-3B9 PD75P308K PD75P308 BLOCK DIAGRAM Page PD75P308 1. PIN FUNCTIONS 1.1 PORT PINS 1.2 NON PORT PINS Page PD75P308 TYPE F P.U.R. : PullUp Resistor TYPE GA TYPE GC Page 2. DIFFERENCES BETWEEN PD75P308 AND Note: PD75P308 and Table 2-1 Differences between 3. WRITING AND VERIFYING PROM (PROGRAM MEMORY) Page Page Note 1: Remarks: 4. ELECTRICAL SPECIFICATIONS Effective value = Peak value x Duty *1: ABSOLUTE MAXIMUM RATINGS Page Page DC CHARACTERISTICS (Ta = -10 to +70C, VDD = 5V 5%) AC CHARACTERISTICS (Ta = -10 to + 70C, VDD = 5V 5%) Operation Other Than Serial Transfer SERIAL TRANSFER OPERATION TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: internal clock output) TWO-LINE AND THREE-LINE SERIAL I/O MODES (SCK: external clock input) SBI MODE (SCK: internal clock output (master)) SBI MODE (SCK: external clock output (master)) AC TIMING TEST POINT (excluding X1 and XT1 inputs) CLOCK TIMING TI0 TIMING SERIAL TRANSFER TIMING THREE-LINE SERIAL I/O MODE: TWO-LINE SERIAL I/O MODE: SERIAL TRANSFER TIMING BUS RELEASE SIGNAL TRANSFER INTERRUPT INPUT TIMING t RESET INPUT TIMING COMMAND SIGNAL TRANSFER LOW-VOLTAGE DATA RETENTION CHARACTERISTICS OF DATA MEMORY IN STOP MODE (Ta = -10 to +70C) DATA RETENTION TIMING (releasing STOP mode by RESET) DATA RETENTION TIMING (standby release signal: releasing STOP mode by interrupt) *1: These symbols are the corresponding AC PROGRAMMING CHARACTERISTICS (Ta = 255C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) DC PROGRAMMING CHARACTERISTICS (Ta = 25 5C, VDD = 6.00.25V, VPP = 12.50.3V, VSS = 0V) PROGRAM MEMORY WRITE TIMING PROGRAM MEMORY READ TIMING 5. PACKAGE DRAWINGS 80 PIN PLASTIC QFP (1420) 80 PIN CERAMIC WQFN PD75P308 6. RECOMMENDED SOLDERING CONDITIONS *: Table 6-1 Soldering Conditions APPENDIX A. DEVELOPMENT TOOLS PROM writing tools Page GENERAL NOTES ON CMOS DEVICES 1 STATIC ELECTRICITY (ALL MOS DEVICES) 2 PROCESSING OF UNUSED PINS (CMOS DEVICES ONLY) 3 STATUS BEFORE INITIALIZATION (ALL MOS DEVICES) [MEMO]