INSTRUCTION SET S3C8245/P8245/C8249/P8249
6-54
LDC/LDE — Load Memory
LDC/LDE (Continued)
Examples: Given: R0 = 11H, R1 = 34H, R2 = 01H, R3 = 04H; Program memory locations
0103H = 4FH, 0104H = 1A, 0105H = 6DH, and 1104H = 88H. External data memory locations
0103H = 5FH, 0104H = 2AH, 0105H = 7DH, and 1104H = 98H:
LDC R0,@RR2 ;R0 ← contents of program memory location 0104H
;R0 = 1AH, R2 = 01H, R3 = 04H
LDE R0,@RR2 ;R0 ← contents of external data memory location 0104H
;R0 = 2AH, R2 = 01H, R3 = 04H
LDC (note) @RR2,R0 ;11H (contents of R0) is loaded into program memory
;location 0104H (RR2),
;working registers R0, R2, R3 → no change
LDE @RR2,R0 ;11H (contents of R0) is loaded into external data memory
;location 0104H (RR2),
;working registers R0, R2, R3 → no change
LDC R0,#01H[RR2] ;R0 ← contents of program memory location 0105H
;(01H + RR2),
;R0 = 6DH, R2 = 01H, R3 = 04H
LDE R0,#01H[RR2] ;R0 ← contents of external data memory location 0105H
;(01H + RR2), R0 = 7DH, R2 = 01H, R3 = 04H
LDC (note) #01H[RR2],R0 ;11H (contents of R0) is loaded into program memory location
;0105H (01H + 0104H)
LDE #01H[RR2],R0 ;11H (contents of R0) is loaded into external data memory
;location 0105H (01H + 0104H)
LDC R0,#1000H[RR2] ;R0 ← contents of program memory location 1104H
;(1000H + 0104H), R0 = 88H, R2 = 01H, R3 = 04H
LDE R0,#1000H[RR2] ;R0 ← contents of external data memory location 1104H
;(1000H + 0104H), R0 = 98H, R2 = 01H, R3 = 04H
LDC R0,1104H ;R0 ← contents of program memory location 1104H, R0 = 88H
LDE R0,1104H ;R0 ← contents of external data memory location 1104H,
;R0 = 98H
LDC (note) 1105H,R0 ;11H (contents of R0) is loaded into program memory location
;1105H, (1105H) ← 11H
LDE 1105H,R0 ;11H (contents of R0) is loaded into external data memory
;location 1105H, (1105H) ← 11H
NOTE: These instructions are not supported by masked ROM type devices.