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Peripheral Architecture

Figure 10 shows the byte lanes used on the DDR2 memory controller. The external memory is always right aligned on the data bus.

Figure 10. Byte Alignment

 

DDR2 memory controller data bus

 

DED[31:24]

DED[23:16]

DED[15:8]

DED[7:0]

(Byte Lane 3)

(Byte Lane 2)

(Byte Lane 1)

(Byte Lane 0)

 

 

 

 

32-bit memory device

16-bit memory device

The DDR2 memory controller supports both little endian and big endian formats. The endianness mode determines whether byte lane 0 (DED[7:0]) is accessed as byte address 0 (little endian) or as byte address N (big endian), where 2n is the memory width in bytes. Similarly, byte lane N is addresses as either byte address 0 (big endian) or as byte address N (little endian).

The DDR2 memory controller uses the endianness mode being used by the rest of the DSP. The endianness mode of the DSP is set during device reset (for more details, see the device-specific data manual. The endianness mode of the DDR2 memory controller is shown on the BE bit of the DDR2 memory controller status register (DMCSTAT); BE = 1 indicates big endian mode and BE = 0 indicates little endian mode.

2.6Address Mapping

The DDR2 memory controller views external DDR2 SDRAM as one continuous block of memory. This statement is true regardless of the number of memory devices located on the chip select space. The DDR2 memory controller receives DDR2 memory access requests along with a 32-bit logical address from the rest of the system. In turn, DDR2 memory controller uses the logical address to generate a row/page, column, bank address, and chip selects for the DDR2 SDRAM. The number of column and bank address bits used is determined by the IBANK and PAGESIZE fields. The chip selection pins used are determined by the DCE0 field (see Table 5). The DDR2 memory controller uses up to 14 bits for the row/page address.

Table 5. Bank Configuration Register Fields for Address Mapping

Bit Field

Bit Value

Bit Description

IBANK

 

Defines the number of internal banks on the external DDR2 memory.

 

0

1 bank

 

1h

2 banks

 

2h

4 banks

 

3h

8 banks

PAGESIZE

 

Defines the page size of each page of the external DDR2 memory.

 

0

256 words (requires 8 column address bits)

 

1h

512 words (requires 9 column address bits)

 

2h

1024 words (requires 10 column address bits)

 

3h

2048 words (requires 11 column address bits)

 

 

 

SPRU970G December 2005 Revised June 2011

C6455/C6454 DDR2 Memory Controller

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Texas Instruments TMS320C6455 manual Bank Configuration Register Fields for Address Mapping, Ibank, Pagesize