Cypress CY7C1460AV33, CY7C1462AV33, CY7C1464AV33 Maximum Ratings, Operating Range, Ambient Range

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CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +4.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC to Outputs in Tri-State

–0.5V to VDDQ + 0.5V

DC Input Voltage

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

Ambient

 

 

Range

Temperature

VDD

VDDQ

Commercial

0°C to +70°C

3.3V

2.5V –5% to

 

 

–5%/+10%

VDD

Industrial

–40°C to +85°C

Electrical Characteristics Over the Operating Range[15, 16]

DC Electrical Characteristics Over the Operating Range

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

for 3.3V I/O

 

3.135

VDD

V

 

 

for 2.5V I/O

 

2.375

2.625

V

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = −4.0 mA

 

2.4

 

V

 

 

for 2.5V I/O, IOH = −1.0 mA

 

2.0

 

V

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

 

0.4

V

 

 

for 2.5V I/O, IOL = 1.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage[15]

for 3.3V I/O

 

2.0

VDD + 0.3V

V

 

 

for 2.5V I/O

 

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage[15]

for 3.3V I/O

 

–0.3

0.8

V

 

 

for 2.5V I/O

 

–0.3

0.7

V

 

 

 

 

 

 

 

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

–5

5

∝A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

∝A

 

 

Input = VDD

 

 

5

∝A

 

Input Current of ZZ

Input = VSS

 

–5

 

∝A

 

 

Input = VDD

 

 

30

∝A

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

–5

5

∝A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

4-ns cycle, 250 MHz

 

475

mA

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

5-ns cycle, 200 MHz

 

425

mA

 

 

 

6-ns cycle, 167 MHz

 

375

mA

 

 

 

 

 

 

 

ISB1

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

225

mA

 

Power-down

VIN ≥ VIH or VIN ≤ VIL, f = fMAX =

 

 

 

 

 

Current—TTL Inputs

1/tCYC

 

 

 

 

ISB2

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

120

mA

 

Power-down

VIN ≤ 0.3V or VIN > VDDQ − 0.3V,

 

 

 

 

 

Current—CMOS Inputs

f = 0

 

 

 

 

ISB3

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

200

mA

 

Power-down

VIN ≤ 0.3V or VIN > VDDQ − 0.3V,

 

 

 

 

 

Current—CMOS Inputs

f = fMAX = 1/tCYC

 

 

 

 

ISB4

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

135

mA

 

Power-down

VIN ≥ VIH or VIN ≤ VIL, f = 0

 

 

 

 

 

Current—TTL Inputs

 

 

 

 

 

Notes:

 

 

 

 

 

 

15.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

16.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05353 Rev. *D

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Contents Logic Block Diagram-CY7C1460AV33 1M x FeaturesFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1464AV33 512K x Logic Block Diagram-CY7C1462AV33 2M xSelection Guide 250 MHz 200 MHz 167 MHz Unit2M × Pin Configurations Pin Tqfp PinoutCY7C1462AV33 2M × Pin Name Type Pin Description Pin DefinitionsClock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Burst Read Accesses Single Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Stall Partial Write Cycle Description 1, 2, 3Function CY7C1460AV33 Function CY7C1462AV33 2,8Disabling the Jtag Feature TAP Controller Block Diagram TAP Controller State DiagramTest Access Port TAP Performing a TAP ResetTAP Instruction Set Bypass RegisterParameter Description Min Max Unit Clock TAP TimingOutput Times Set-up Times3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size ×36 Bit Size ×18 Bit Size ×72 Instruction Code DescriptionBit# Ball ID Ball Fbga Boundary Scan OrderCY7C1460AV33 1M x 36, CY7C1462AV33 2M x Bit# Ball ID CY7C14604V33 512K x Bit# Ball ID Ball BGA Boundary Scan Order 13Maximum Ratings Electrical Characteristics Over the Operating Range15Operating Range Ambient RangeAC Test Loads and Waveforms Capacitance17Thermal Resistance17 250 200 167 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range 22Read/Write/Timing24, 25 Switching WaveformsNOP,STALL and Deselect Cycles24, 25 ZZ Mode Timing28Ordering Information 250 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of Change

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.
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