Cypress CY7C1462AV33 manual Capacitance17, Thermal Resistance17, AC Test Loads and Waveforms

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CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

Capacitance[17]

Parameter	Description	Test Conditions	100 TQFP	165 FBGA	209 FBGA	Unit
Parameter	Description	Test Conditions	Max.	Max.	Max.	Unit

CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	6.5	7	5	pF
		VDD = 2.5V VDDQ = 2.5V
CCLK	Clock Input Capacitance	VDD = 2.5V VDDQ = 2.5V	3	7	5	pF
CI/O	Input/Output Capacitance		5.5	6	7	pF

Thermal Resistance[17]

	Parameters	Description	Test Conditions	100 TQFP	165 FBGA	209 FBGA	Unit
	Parameters	Description	Test Conditions	Package	Package	Package	Unit

	ΘJA	Thermal Resistance	Test conditions follow standard	25.21	20.8	25.31	°C/W
		(Junction to Ambient)	test methods and procedures
			for measuring thermal
	ΘJC	Thermal Resistance	for measuring thermal	2.28	3.2	4.48	°C/W
	ΘJC	Thermal Resistance	impedance, per EIA/JESD51.	2.28	3.2	4.48	°C/W
		(Junction to Case)

AC Test Loads and Waveforms

3.3V I/O Test Load

3.3V

R = 317Ω

OUTPUT

Z0

= 50Ω

OUTPUT

RL

= 50Ω

5 pF

R = 351Ω

INCLUDING

VT = 1.5V

JIG AND

VDDQ					ALL INPUT PULSES
VDDQ													90%
10%									90%								10%
10%																	10%
GND																	≤ 1 ns
GND
≤ 1 ns
≤ 1 ns

(a)

SCOPE

(b)

2.5V I/O Test Load

2.5V

R = 1667Ω

OUTPUT

Z0

= 50Ω

OUTPUT

RL = 50Ω

5 pF

R =1538Ω

INCLUDING

VT = 1.25V

JIG AND

(a)

(b)

SCOPE

Note:

17. Tested initially and after any design or process changes that may affect these parameters.

(c)

VDDQ

ALL INPUT PULSES

90%

10%

GND

≤ 1 ns

(c)

90%

10%

≤ 1 ns

Document #: 38-05353 Rev. *D

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Contents Functional Description FeaturesLogic Block Diagram-CY7C1460AV33 1M x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1462AV33 2M xLogic Block Diagram-CY7C1464AV33 512K x 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 2M ×CY7C1462AV33 2M × Pin Definitions Pin Name Type Pin DescriptionPower supply inputs to the core of the device Power supply for the I/O circuitryClock input to the Jtag circuitry Single Write Accesses Single Read AccessesBurst Read Accesses Burst Write AccessesInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Function CY7C1460AV33 Partial Write Cycle Description 1, 2, 3Stall Function CY7C1462AV33 2,8Test Access Port TAP TAP Controller Block Diagram TAP Controller State DiagramDisabling the Jtag Feature Performing a TAP ResetBypass Register TAP Instruction SetOutput Times TAP TimingParameter Description Min Max Unit Clock Set-up Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions3V TAP AC Test Conditions Identification Register DefinitionsRegister Name Bit Size ×36 Bit Size ×18 Bit Size ×72 Scan Register SizesIdentification Codes Instruction Code DescriptionBall Fbga Boundary Scan Order CY7C1460AV33 1M x 36, CY7C1462AV33 2M x Bit# Ball IDBit# Ball ID Ball BGA Boundary Scan Order 13 CY7C14604V33 512K x Bit# Ball IDOperating Range Electrical Characteristics Over the Operating Range15Maximum Ratings Ambient RangeCapacitance17 Thermal Resistance17AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 22 250 200 167 Parameter Description Unit Min MaxSwitching Waveforms Read/Write/Timing24, 25ZZ Mode Timing28 NOP,STALL and Deselect Cycles24, 25Ordering Information 250 Package Diagrams Pin Tqfp 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.