Cypress CY7C1460AV33, CY7C1462AV33, CY7C1464AV33 manual Switching Waveforms, Read/Write/Timing24, 25

Page 20

CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

Switching Waveforms

Read/Write/Timing[24, 25, 26]

1

2 t CYC 3

CLK

 

tCENS tCENH

tCH tCL

CEN

tCES tCEH

CE

ADV/LD

WE

BWx

ADDRESS A1 A2

 

4

5

6

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

A4

A5

 

tCO

 

8 9 10

A6 A7

tAS tAH

tDS tDH

tCLZ

tDOH

tOEV tCHZ

Data

D(A1)

In-Out (DQ)

OE

D(A2) D(A2+1) Q(A3) Q(A4)

tOEHZ

Q(A4+1) D(A5) Q(A6)

tDOH tOELZ

WRITE

WRITE

BURST

D(A1)

D(A2)

WRITE

 

 

D(A2+1)

READ

READ

BURST

WRITE

READ

WRITE

DESELECT

Q(A3)

Q(A4)

READ

D(A5)

Q(A6)

D(A7)

 

 

 

Q(A4+1)

 

 

 

 

DON’T CARE

UNDEFINED

Notes:

24.For this waveform ZZ is tied low.

25.When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

26.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.

Document #: 38-05353 Rev. *D

Page 20 of 27

[+] Feedback

Image 20
Contents Features Logic Block Diagram-CY7C1460AV33 1M xFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1462AV33 2M x Logic Block Diagram-CY7C1464AV33 512K xSelection Guide 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 2M ×CY7C1462AV33 2M × Pin Definitions Pin Name Type Pin DescriptionClock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Single Read Accesses Burst Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Partial Write Cycle Description 1, 2, 3 StallFunction CY7C1460AV33 Function CY7C1462AV33 2,8TAP Controller Block Diagram TAP Controller State Diagram Disabling the Jtag FeatureTest Access Port TAP Performing a TAP ResetBypass Register TAP Instruction SetTAP Timing Parameter Description Min Max Unit ClockOutput Times Set-up TimesTAP DC Electrical Characteristics And Operating Conditions 3V TAP AC Test Conditions5V TAP AC Test Conditions Identification Register DefinitionsScan Register Sizes Identification CodesRegister Name Bit Size ×36 Bit Size ×18 Bit Size ×72 Instruction Code DescriptionBit# Ball ID Ball Fbga Boundary Scan OrderCY7C1460AV33 1M x 36, CY7C1462AV33 2M x Bit# Ball ID Ball BGA Boundary Scan Order 13 CY7C14604V33 512K x Bit# Ball IDElectrical Characteristics Over the Operating Range15 Maximum RatingsOperating Range Ambient RangeAC Test Loads and Waveforms Capacitance17Thermal Resistance17 Switching Characteristics Over the Operating Range 22 250 200 167 Parameter Description Unit Min MaxSwitching Waveforms Read/Write/Timing24, 25ZZ Mode Timing28 NOP,STALL and Deselect Cycles24, 25Ordering Information 250 Package Diagrams Pin Tqfp 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.