Cypress CY7C1464AV33, CY7C1462AV33 manual 3V TAP AC Test Conditions, 5V TAP AC Test Conditions

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CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

3.3V TAP AC Test Conditions

Input pulse levels	VSS to 3.3V
Input rise and fall times	1 ns
Input timing reference levels	1.5V
Output reference levels	1.5V
Test load termination supply voltage	1.5V

2.5V TAP AC Test Conditions

Input pulse levels	VSS to 2.5V
Input rise and fall time	1 ns
Input timing reference levels	1.25V
Output reference levels	1.25V
Test load termination supply voltage	1.25V

3.3V TAP AC Output Load Equivalent

2.5V TAP AC Output Load Equivalent

1.5V

1.25V

50Ω

50Ω

TDO

TDO

ZO= 50Ω

20pF

ZO= 50Ω

20pF

TAP DC Electrical Characteristics And Operating Conditions

(0°C < TA < +70°C; V = 3.135V to 3.6V unless otherwise noted)[11]

DD

Parameter

Description

Test Conditions

Min.

Max.

Unit

VOH1

Output HIGH Voltage

IOH = –4.0 mA, VDDQ = 3.3V

2.4

V

IOH = –1.0 mA, VDDQ = 2.5V

2.0

V

VOH2

Output HIGH Voltage

IOH = –100 µA

VDDQ = 3.3V

2.9

V

VDDQ = 2.5V

2.1

V

VOL1

Output LOW Voltage

IOL = 8.0 mA

VDDQ = 3.3V

0.4

V

IOL = 1.0 mA

VDDQ = 2.5V

0.4

V

VOL2

Output LOW Voltage

IOL = 100 µA

VDDQ = 3.3V

0.2

V

VDDQ = 2.5V

0.2

V

VIH

Input HIGH Voltage

VDDQ = 3.3V

2.0

VDD + 0.3

V

VDDQ = 2.5V

1.7

VDD + 0.3

V

VIL

Input LOW Voltage

VDDQ = 3.3V

–0.3

0.8

V

VDDQ = 2.5V

–0.3

0.7

V

IX

Input Load Current

GND < VIN < VDDQ

–5

5

µA

Identification Register Definitions

Instruction Field

CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

Description

(1M ×36)

(2M ×18)

(512K ×72)

Revision Number (31:29)

000

000

000

Describes the version number.

Device Depth (28:24)[12]

01011

01011

01011

Reserved for Internal Use

Architecture/Memory Type(23:18)

001000

001000

001000

Defines memory type and archi-

tecture

Bus Width/Density(17:12)

100111

010111

110111

Defines width and density

Cypress JEDEC ID Code (11:1)

00000110100

00000110100

00000110100

Allows unique identification of

SRAM vendor.

ID Register Presence Indicator (0)

1

1

1

Indicates the presence of an ID

register.

Notes:

11.All voltages referenced to VSS (GND).

12.Bit #24 is “1” in the ID Register Definitions for both 2.5V and 3.3V versions of this device.

Document #: 38-05353 Rev. *D

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Contents Logic Block Diagram-CY7C1460AV33 1M x FeaturesFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1464AV33 512K x Logic Block Diagram-CY7C1462AV33 2M xSelection Guide 250 MHz 200 MHz 167 MHz Unit2M × Pin Configurations Pin Tqfp PinoutCY7C1462AV33 2M × Pin Name Type Pin Description Pin DefinitionsPower supply for the I/O circuitry Power supply inputs to the core of the deviceClock input to the Jtag circuitry Burst Read Accesses Single Read AccessesSingle Write Accesses Burst Write AccessesLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Stall Partial Write Cycle Description 1, 2, 3Function CY7C1460AV33 Function CY7C1462AV33 2,8Disabling the Jtag Feature TAP Controller Block Diagram TAP Controller State DiagramTest Access Port TAP Performing a TAP ResetTAP Instruction Set Bypass RegisterParameter Description Min Max Unit Clock TAP TimingOutput Times Set-up Times3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size ×36 Bit Size ×18 Bit Size ×72 Instruction Code DescriptionCY7C1460AV33 1M x 36, CY7C1462AV33 2M x Bit# Ball ID Ball Fbga Boundary Scan OrderBit# Ball ID CY7C14604V33 512K x Bit# Ball ID Ball BGA Boundary Scan Order 13Maximum Ratings Electrical Characteristics Over the Operating Range15Operating Range Ambient RangeThermal Resistance17 Capacitance17AC Test Loads and Waveforms 250 200 167 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range 22Read/Write/Timing24, 25 Switching WaveformsNOP,STALL and Deselect Cycles24, 25 ZZ Mode Timing28Ordering Information 250 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of Change

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.