Cypress CY7C1462AV33 manual Partial Write Cycle Description 1, 2, 3, Stall, Function CY7C1460AV33

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CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

Truth Table[1, 2, 3, 4, 5, 6, 7] (continued)

Address

Operation

Used

CE

ZZ

ADV/LD

WE

BWx

OE

CEN

CLK

DQ

Write Cycle

External

L

L

L

L

L

X

L

L-H

Data In (D)

(Begin Burst)

Write Cycle

Next

X

L

H

X

L

X

L

L-H

Data In (D)

(Continue Burst)

NOP/WRITE ABORT

None

L

L

L

L

H

X

L

L-H

Tri-State

(Begin Burst)

WRITE ABORT

Next

X

L

H

X

H

X

L

L-H

Tri-State

(Continue Burst)

IGNORE CLOCK

Current

X

L

X

X

X

X

H

L-H

-

EDGE

(Stall)

SLEEP MODE

None

X

H

X

X

X

X

X

X

Tri-State

Partial Write Cycle Description[1, 2, 3, 8]

Function (CY7C1460AV33)

WE

BW

d

BW

c

BW

b

BW

a

Read

H

X

X

X

X

Write – No bytes written

L

H

H

H

H

Write Byte a – (DQa and DQPa)

L

H

H

H

L

Write Byte b – (DQb and DQPb)

L

H

H

L

H

Write Bytes b, a

L

H

H

L

L

Write Byte c – (DQc and DQPc)

L

H

L

H

H

Write Bytes c, a

L

H

L

H

L

Write Bytes c, b

L

H

LL

L

H

Write Bytes c, b, a

L

H

L

L

L

Write Byte d – (DQd and DQPd)

L

L

H

H

H

Write Bytes d, a

L

L

H

H

L

Write Bytes d, b

L

L

H

L

H

Write Bytes d, b, a

L

L

H

L

L

Write Bytes d, c

L

L

L

H

H

Write Bytes d, c, a

L

L

L

H

L

Write Bytes d, c, b

L

L

L

L

H

Write All Bytes

L

L

L

L

L

Function (CY7C1462AV33)[2,8]

WE

BW

b

BW

a

Read

H

x

x

Write – No Bytes Written

L

H

H

Write Byte a – (DQa and DQPa)

L

H

L

Write Byte b – (DQb and DQPb)

L

L

H

Write Both Bytes

L

L

L

Function (CY7C1464AV33)[2,8]

WE

BW

x

Read

H

x

Write – No Bytes Written

L

H

Write Byte X − (DQx and DQPx)

L

L

Write All Bytes

L

All

= L

BW

Note:

8. Table only lists a partial listing of the byte write combinations. Any combination of BW[a:d] is valid. Appropriate write will be done based on which byte write is active.

Document #: 38-05353 Rev. *D

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Contents Logic Block Diagram-CY7C1460AV33 1M x FeaturesFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1464AV33 512K x Logic Block Diagram-CY7C1462AV33 2M xSelection Guide 250 MHz 200 MHz 167 MHz Unit2M × Pin Configurations Pin Tqfp PinoutCY7C1462AV33 2M × Pin Name Type Pin Description Pin DefinitionsPower supply inputs to the core of the device Power supply for the I/O circuitryClock input to the Jtag circuitry Burst Read Accesses Single Read AccessesSingle Write Accesses Burst Write AccessesInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Stall Partial Write Cycle Description 1, 2, 3Function CY7C1460AV33 Function CY7C1462AV33 2,8Disabling the Jtag Feature TAP Controller Block Diagram TAP Controller State DiagramTest Access Port TAP Performing a TAP ResetTAP Instruction Set Bypass RegisterParameter Description Min Max Unit Clock TAP TimingOutput Times Set-up Times3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size ×36 Bit Size ×18 Bit Size ×72 Instruction Code DescriptionBall Fbga Boundary Scan Order CY7C1460AV33 1M x 36, CY7C1462AV33 2M x Bit# Ball IDBit# Ball ID CY7C14604V33 512K x Bit# Ball ID Ball BGA Boundary Scan Order 13Maximum Ratings Electrical Characteristics Over the Operating Range15Operating Range Ambient RangeCapacitance17 Thermal Resistance17AC Test Loads and Waveforms 250 200 167 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range 22Read/Write/Timing24, 25 Switching WaveformsNOP,STALL and Deselect Cycles24, 25 ZZ Mode Timing28Ordering Information 250 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of Change

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.