Cypress CY7C1526V18, CY7C1513V18 Application Example, Truth Table, Sram #1, Operation, Rps Wps

Page 10

 

 

 

 

 

 

 

CY7C1511V18, CY7C1526V18

 

 

 

 

 

 

 

CY7C1513V18, CY7C1515V18

Application Example

 

 

 

 

 

 

 

 

 

 

Figure 1 shows four QDR-II used in an application.

 

 

 

 

 

 

 

 

 

 

 

Figure 1. Application Example

 

 

 

 

 

 

 

SRAM #1

ZQ

R = 250ohms

 

SRAM #4

ZQ

R = 250ohms

 

Vt

 

R W B

 

CQ/CQ#

 

 

R W B

 

CQ/CQ#

 

 

 

D

P P W

 

Q

 

D

P P W

 

Q

 

 

R

S S S

 

 

S S S

 

 

 

A

C C# K K#

 

 

 

 

 

 

# # #

 

A

# # #

C C# K K#

 

 

DATA IN

 

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

 

Vt

 

 

 

 

Address

 

 

 

 

 

 

Vt

 

 

 

BUS

RPS#

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

WPS#

 

 

 

 

 

 

 

 

 

 

MASTER

 

 

 

 

 

 

 

 

 

 

BWS#

 

 

 

 

 

 

 

 

 

 

(CPU

 

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN#

 

 

 

 

 

 

 

 

 

 

or

Source K

 

 

 

 

 

 

 

 

 

 

ASIC)

 

 

 

 

 

 

 

 

 

 

Source K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delayed K

 

 

 

 

 

 

 

 

 

 

 

Delayed K#

 

 

 

 

 

 

 

 

 

 

 

R

R = 50ohms

Vt = Vddq/2

 

 

 

 

 

 

 

Truth Table

 

 

 

 

 

 

 

 

 

 

The truth table for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follows. [2, 3, 4, 5, 6, 7]

 

 

Operation

K

RPS

 

 

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

H [8]

 

 

L [9]

D(A) at K(t + 1)

D(A + 1) at

 

 

D(A + 2) at K(t + 2)

 

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L [9]

 

 

X

Q(A) at

 

 

Q(A + 1) at C(t + 2)

 

 

 

Q(A + 3) at C(t + 3)

 

 

C(t + 1)

Q(A + 2) at C(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait one and a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive C and C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Previous State

Previous State

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.

5.“t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request.

Document Number: 38-05363 Rev. *F

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1526V18 Logic Block Diagram CY7C1511V18Doff Logic Block Diagram CY7C1513V18 Logic Block Diagram CY7C1515V18CY7C1511V18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1526V18 8M xWPS BWS CY7C1513V18 4M xCY7C1515V18 2M x Pin Definitions Pin Name Pin DescriptionReferenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagRead Operations Single Clock ModeFunctional Overview Write OperationsProgrammable Impedance Concurrent TransactionsDepth Expansion Echo ClocksSram #1 Application ExampleTruth Table OperationNWS1 Write Cycle DescriptionsComments BWS0BWS0 BWS1 BWS2 BWS3 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitHigh Switching CharacteristicsParameter Min Max LOWParameter Min Max Output Times DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 28, 29Ordering Information 250 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument Number Document HistoryREV ECN no Submission ORIG. Description of Change Date VKN/AESA Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions Pyrs