Cypress CY7C1472BV33 Switching Characteristics, Parameter Description 250 200 167 Unit Min Max

CY7C1470BV33

CY7C1472BV33, CY7C1474BV33

Switching Characteristics

Over the Operating Range. Timing reference is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. Test conditions shown in

(a) of “AC Test Loads and Waveforms” on page 21 unless otherwise noted.

Parameter							Description		–250		–200			–167		Unit
								Min		Max	Min	Max	Min		Max
tPower[16]	VCC (typical) to the First Access Read or Write							1			1		1			ms
Clock
tCYC	Clock Cycle Time							4.0			5.0		6.0			ns
FMAX	Maximum Operating Frequency									250		200			167	MHz
tCH	Clock HIGH							2.0			2.0		2.2			ns
tCL	Clock LOW							2.0			2.0		2.2			ns
Output Times
tCO	Data Output Valid After CLK Rise									3.0		3.0			3.4	ns
tOEV		LOW to Output Valid								3.0		3.0			3.4	ns
	OE
tDOH	Data Output Hold After CLK Rise							1.3			1.3		1.5			ns
tCHZ	Clock to High-Z[17, 18, 19]									3.0		3.0			3.4	ns
tCLZ	Clock to Low-Z[17, 18, 19]							1.3			1.3		1.5			ns
tEOHZ		HIGH to Output High-Z[17, 18, 19]								3.0		3.0			3.4	ns
	OE
tEOLZ		LOW to Output Low-Z[17, 18, 19]						0			0		0			ns
	OE
Setup Times
tAS	Address Setup Before CLK Rise							1.4			1.4		1.5			ns
tDS	Data Input Setup Before CLK Rise							1.4			1.4		1.5			ns
tCENS					Setup Before CLK Rise			1.4			1.4		1.5			ns
	CEN
tWES							x Setup Before CLK Rise	1.4			1.4		1.5			ns
	WE,			BW
tALS
	ADV/LD					Setup Before CLK Rise		1.4			1.4		1.5			ns
tCES	Chip Select Setup							1.4			1.4		1.5			ns
Hold Times
tAH	Address Hold After CLK Rise							0.4			0.4		0.5			ns
tDH	Data Input Hold After CLK Rise							0.4			0.4		0.5			ns
tCENH			Hold After CLK Rise					0.4			0.4		0.5			ns
	CEN
tWEH							x Hold After CLK Rise	0.4			0.4		0.5			ns
	WE,			BW
tALH
	ADV/LD					Hold after CLK Rise		0.4			0.4		0.5			ns
tCEH	Chip Select Hold After CLK Rise							0.4			0.4		0.5			ns

Notes

16.This part has an internal voltage regulator; tpower is the time power is supplied above VDD minimum initially, before a read or write operation can be initiated.

17.tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of “AC Test Loads and Waveforms” on page 21. Transition is measured ±200 mV from steady-state voltage.

18.At any voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions.

19.This parameter is sampled and not 100% tested.

Document #: 001-15031 Rev. *C Page 22 of 30

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