Cypress CY7C2563KV18, CY7C2561KV18 manual Functional Overview, Read Operations, Write Operations

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PRELIMINARY

CY7C2561KV18, CY7C2576KV18

 

 

CY7C2563KV18, CY7C2565KV18

 

 

 

 

 

 

 

 

Functional Overview

The CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, CY7C2565KV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II+ completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C2561KV18, four 9-bit data transfers in the case of CY7C2576KV18, four 18-bit data transfers in the case of CY7C2563KV18, and four 36-bit data transfers in the case of CY7C2565KV18, in two clock cycles.

These devices operate with a read latency of two and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then device behaves in QDR-I mode with a read latency of one clock cycle.

Accesses for both ports are initiated on the positive input clock

(K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K).

All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) outputs pass through output registers controlled by the rising edge of the input clocks (K and K) as well.

All synchronous control (RPS, WPS, NWS[x:0], BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K).

CY7C2563KV18 is described in the following sections. The same basic descriptions apply to CY7C2561KV18, CY7C2576KV18 and CY7C2565KV18.

Read Operations

The CY7C2563KV18 is organized internally as four arrays of 1M x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to the address inputs is stored in the read address register. Following the next two K clock rise, the corre- sponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subse- quent rising edge of K, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid

0.45ns from the rising edge of the input clock (K or K). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K

clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the input clocks (K and K).

When the read port is deselected, the CY7C2563KV18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the negative input clock (K). This enables for a seamless transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock

(K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C2563KV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation.

Concurrent Transactions

The read and write ports on the CY7C2563KV18 operates completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise.

Document Number: 001-15887 Rev. *E

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Contents Cypress Semiconductor Corporation 198 Champion Court Features ConfigurationsFunctional Description Doff Logic Block Diagram CY7C2561KV18Logic Block Diagram CY7C2576KV18 Logic Block Diagram CY7C2563KV18 Logic Block Diagram CY7C2565KV18CY7C2576KV18 8M x Pin ConfigurationCY7C2561KV18 8M x CY7C2565KV18 2M x CY7C2563KV18 4M xWPS BWS Pin Definitions Pin Name Pin Description Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceTDO for Jtag TCK Pin for JtagFunctional Overview Read OperationsWrite Operations Byte Write OperationsValid Data Indicator Qvld Depth ExpansionProgrammable Impedance Echo ClocksOperation Application ExampleTruth Table Write Cycle Descriptions CommentsRemains unaltered During the data portion of a write sequenceWrite cycle description table for CY7C2565KV18 follows DeviceInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Electrical Characteristics TAP ControllerParameter Description Test Conditions Min Max Unit GND ≤ VI ≤ VDDTAP AC Switching Characteristics TAP Timing and Test ConditionsScan Register Sizes Register Name Bit Size Instruction Codes DescriptionBoundary Scan Order Bit # Bump ID Power Up Sequence in QDR-II+ Sram Power Up SequencePLL Constraints VDD / VddqElectrical Characteristics DC Electrical CharacteristicsMaximum Ratings Operating RangeAC Electrical Characteristics CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitAC Test Loads and Waveforms Including JIG ScopeSwitching Characteristics Parameter Min MaxHigh LOWSwitching Waveforms Read/Write/Deselect Sequence 32, 33Ordering Information 450 Package Diagram Ball Fbga 13 x 15 x 1.4 mmDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions
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