Cypress CY7C2576KV18, CY7C2563KV18, CY7C2561KV18 manual Application Example, Truth Table, Operation

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PRELIMINARY

CY7C2561KV18, CY7C2576KV18

 

 

CY7C2563KV18, CY7C2565KV18

 

 

 

 

 

 

 

 

Application Example

Figure 1 shows two QDR-II+ used in an application.

Figure 1. Application Example

DATA IN

DATA OUT

Address

BUS MASTER RPS

(CPU or ASIC) WPS BWS

CLKIN1/CLKIN1

CLKIN2/CLKIN2

Source K

Source K

ODT

 

 

 

ZQ

RQ = 250 ohms

 

RQ = 250 ohms

 

 

 

 

 

ZQ

 

 

SRAM #1

ODT

 

SRAM #2

ODT

Vt

 

 

CQ/CQ

 

 

CQ/CQ

 

D

RPS WPS BWS

Q

D

 

Q

R

A

K K

A

RPS WPS BWS

K K

 

 

 

 

 

R

 

 

 

 

 

 

Vt

 

 

 

 

 

 

Vt

 

 

 

 

 

 

R

 

R

 

 

 

 

 

 

 

 

 

 

 

R = 50ohms, Vt = VDDQ/2

Table 3. Truth Table

The truth table for CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, and CY7C2565KV18 follows. [4, 5, 6, 7, 8, 9]

Operation

K

RPS

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

H [10]

L [11]

D(A) at K(t + 1)

D(A + 1) at

 

 

D(A + 2) at K(t + 2)

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L [11]

X

Q(A) at

 

 

Q(A + 1) at K(t + 3)

 

 

 

Q(A + 3) at K(t + 4)

K(t + 2)

Q(A + 2) at K(t + 3)

(2.5 cycle Latency)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait two and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycles; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive K and K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

H

D = X

D = X

D = X

D = X

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

 

 

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

X

X

Previous State

Previous State

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

4.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

5.Device powers up deselected with the outputs in a tri-state condition.

6.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.

7.“t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

8.Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.

9.Ensure that when clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

10.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

11.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request.

Document Number: 001-15887 Rev. *E

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Contents Functional Description Features ConfigurationsCypress Semiconductor Corporation 198 Champion Court Logic Block Diagram CY7C2576KV18 Logic Block Diagram CY7C2561KV18Doff Logic Block Diagram CY7C2563KV18 Logic Block Diagram CY7C2565KV18CY7C2561KV18 8M x Pin ConfigurationCY7C2576KV18 8M x WPS BWS CY7C2563KV18 4M xCY7C2565KV18 2M x Pin Definitions Pin Name Pin Description TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TCK Pin for JtagWrite Operations Functional OverviewRead Operations Byte Write OperationsProgrammable Impedance Valid Data Indicator QvldDepth Expansion Echo ClocksTruth Table Application ExampleOperation Remains unaltered Write Cycle DescriptionsComments During the data portion of a write sequenceInto the device. D359 remains unaltered Write cycle description table for CY7C2565KV18 followsDevice Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsParameter Description Test Conditions Min Max Unit TAP Electrical CharacteristicsTAP Controller GND ≤ VI ≤ VDDTAP AC Switching Characteristics TAP Timing and Test ConditionsScan Register Sizes Register Name Bit Size Instruction Codes DescriptionBoundary Scan Order Bit # Bump ID PLL Constraints Power Up Sequence in QDR-II+ SramPower Up Sequence VDD / VddqMaximum Ratings Electrical CharacteristicsDC Electrical Characteristics Operating RangeThermal Resistance AC Electrical CharacteristicsCapacitance Parameter Description Test Conditions Max UnitAC Test Loads and Waveforms Including JIG ScopeHigh Switching CharacteristicsParameter Min Max LOWSwitching Waveforms Read/Write/Deselect Sequence 32, 33Ordering Information 450 Package Diagram Ball Fbga 13 x 15 x 1.4 mmWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History