Cypress CY7C2561KV18, CY7C2563KV18 manual Features Configurations, Functional Description

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CY7C2561KV18, CY7C2576KV18

PRELIMINARY CY7C2563KV18, CY7C2565KV18

72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Features

Configurations

Separate independent read and write data ports

Supports concurrent transactions

550 MHz clock for high bandwidth

4-word burst for reducing address bus frequency

Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

Available in 2.5 clock cycle latency

Two input clocks (K and K) for precise DDR timing

SRAM uses rising edges only

Echo clocks (CQ and CQ) simplify data capture in high-speed systems

Data valid pin (QVLD) to indicate valid data on the output

On-Die Termination (ODT) feature

Supported for D[x:0], BWS[x:0], and K/K inputs

Single multiplexed address input bus latches address inputs for read and write ports

Separate port selects for depth expansion

Synchronous internally self-timed writes

QDR™-II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

Operates similar to QDR-I device with 1 cycle read latency when DOFF is asserted LOW

Available in x8, x9, x18, and x36 configurations

Full data coherency, providing most current data

Core VDD = 1.8V± 0.1V; IO VDDQ = 1.4V to VDD [1]

Supports both 1.5V and 1.8V IO supply

HSTL inputs and variable drive HSTL output buffers

Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

Offered in both Pb-free and non Pb-free packages

JTAG 1149.1 compatible test access port

Phase Locked Loop (PLL) for accurate data placement

With Read Cycle Latency of 2.5 cycles:

CY7C2561KV18 – 8M x 8

CY7C2576KV18 – 8M x 9

CY7C2563KV18 – 4M x 18

CY7C2565KV18 – 2M x 36

Functional Description

The CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, and CY7C2565KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture. Similar to QDR-II archi- tecture, QDR-II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common IO devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C2561KV18), 9-bit words (CY7C2576KV18), 18-bit words (CY7C2563KV18), or 36-bit words (CY7C2565KV18) that burst sequentially into or out of the device. Because data is trans- ferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simpli- fying system design by eliminating bus “turn-arounds”.

These devices have an On-Die Termination feature supported for D[x:0], BWS[x:0], and K/K inputs, which helps eliminate external termination resistors, reduce cost, reduce board area, and simplify board routing.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Table 1. Selection Guide

Description

 

550 MHz

500 MHz

450 MHz

400 MHz

Unit

Maximum Operating Frequency

 

550

500

450

400

MHz

Maximum Operating Current

x8

900

830

760

690

mA

 

x9

900

830

760

690

 

 

x18

920

850

780

710

 

 

x36

1310

1210

1100

1000

 

Note

1. The Cypress QDR-II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD.

Cypress Semiconductor Corporation • 198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document Number: 001-15887 Rev. *E

 

 

Revised April 24, 2009

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Contents Functional Description Features ConfigurationsCypress Semiconductor Corporation 198 Champion Court Logic Block Diagram CY7C2576KV18 Logic Block Diagram CY7C2561KV18Doff Logic Block Diagram CY7C2565KV18 Logic Block Diagram CY7C2563KV18CY7C2561KV18 8M x Pin ConfigurationCY7C2576KV18 8M x WPS BWS CY7C2563KV18 4M xCY7C2565KV18 2M x Pin Definitions Pin Name Pin Description Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceTDO for Jtag TCK Pin for JtagRead Operations Functional OverviewWrite Operations Byte Write OperationsDepth Expansion Valid Data Indicator QvldProgrammable Impedance Echo ClocksTruth Table Application ExampleOperation Comments Write Cycle DescriptionsRemains unaltered During the data portion of a write sequenceDevice Write cycle description table for CY7C2565KV18 followsInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Controller TAP Electrical CharacteristicsParameter Description Test Conditions Min Max Unit GND ≤ VI ≤ VDDTAP Timing and Test Conditions TAP AC Switching CharacteristicsInstruction Codes Description Scan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump ID Power Up Sequence Power Up Sequence in QDR-II+ SramPLL Constraints VDD / VddqDC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Operating RangeCapacitance AC Electrical CharacteristicsThermal Resistance Parameter Description Test Conditions Max UnitIncluding JIG Scope AC Test Loads and WaveformsParameter Min Max Switching CharacteristicsHigh LOWRead/Write/Deselect Sequence 32, 33 Switching WaveformsOrdering Information 450 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History