S1F76300 Series

S1F76310M1K0

VSS = 0V, Ta = 25 ˚C unless otherwise noted

 

 

 

 

Parameter

Symbol

Condition

 

Rating

 

Unit

 

 

 

 

 

Min.

Typ.

Max.

 

 

 

 

 

 

 

 

 

 

 

Input voltage

VI1

VO > VI2

0.9

2.0

V

 

 

VI2

0.9

2.0

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output voltage

VO

Vl1 = 1.5V

3.40

3.50

3.60

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Detection voltage

VDET

 

1.00

1.05

1.10

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Detection voltage hysteresis ratio

VDET

 

5

%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating current

IDDO

VI1 = 1.5V, IO = 1.0mA

8

40

μA

 

 

Standby current

IDDS

VI1 = 1.5V

3

10

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching transistor ON resistance

RSWON

VI1 = 1.5V, VO = 3.5V,

6

12

Ω

 

 

VSW = 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching transistor leakage current

ISWQ

VI1 = 1.5V, VO = 1.5V,

0.5

μA

 

 

VSW = 7.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Backup switch ON resistance

RBSON

VI1 = 1.0V, VI2 = 2.0V,

70

160

Ω

 

 

IO = 1.0mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Backup switching leakage current

IBSQ

VI1 = 1.0V, VO = 3.5V,

0.1

μA

 

 

VI2 = 2.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low-level output current

IOL

VI1 = 0.9V, VDS = 0.2V

0.05

0.15

mA

 

 

RST

 

 

 

 

pullup current

IIH

VI1 = 1.5V

0.5

μA

 

 

PS

 

 

Multiplication clock frequency

fCLK

VI1 = 1.5V

30

40

50

kHz

 

S1F76310M1A0

 

VSS = 0V, Ta = 25 ˚C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Condition

 

Rating

 

Unit

 

 

 

 

 

Min.

Typ.

Max.

 

 

 

 

 

 

 

 

 

 

 

Input voltage

VI1

VO > VI2

0.9

2.0

V

 

 

VI2

0.9

2.0

V

 

 

 

 

 

 

 

 

 

Output voltage

VO

Vl1 = 1.5V

4.80

5.00

5.20

V

 

 

Detection voltage

VDET

 

1.00

1.05

1.10

V

 

 

Detection voltage hysteresis ratio

VDET

 

5

%

 

 

Operating current

IDDO

VI1 = 1.5V, IO = 1.0mA

10

50

μA

 

 

Standby current

IDDS

VI1 = 1.5V

3

10

μA

 

 

Switching transistor ON resistance

RSWON

VI1 = 1.5V, VO = 5.0V,

5

10

Ω

 

 

VSW = 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching transistor leakage current

ISWQ

VI1 = 1.5V, VO = 1.5V,

0.5

μA

 

 

VSW = 7.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

Backup switch ON resistance

RBSON

VI1 = 1.0V, VI2 = 3.0V,

50

100

Ω

 

 

IO = 1.0mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Backup switching leakage current

IBSQ

VI1 = 1.0V, VO = 5.0V,

0.1

μA

 

 

VI2 = 3.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low-level output current

IOL

VI1 = 0.9V, VDS = 0.2V

0.05

0.15

mA

 

 

RST

 

 

 

pullup current

IIH

VI1 = 1.5V

0.5

μA

 

 

PS

 

 

Multiplication clock frequency

fCLK

VI1 = 1.5V

35

45

55

kHz

 

4–6

EPSON

S1F70000 Series Technical Manual