Epson S1F70000 manual 63

S1F76540 Series

Table 2.3 DC characteristics (2)

Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V unless otherwise noted

Parameter

Symbol

Characteristics

Min.

Typ.

Max.

Unit

IO = 10 mA, VI = –5.0 V during

4-time boosting

200

300

Ω

Boost output impedance

RO

C1, C2, C3, CO = 10 μF (tantalum)

IO = 10 mA, VI = –3.0 V,

Ta = 25°C during 4-time boosting

250

300

Ω

C1, C2, C3, CO = 10 μF (tantalum)

IO = 2 mA, VI = –5.0 V during

4-time boosting

95

%

Boost power conversion

Peff

C1, C2, C3, CO = 10 μF (tantalum)

efficiency

IO = 2 mA, VI = –3.0 V, Ta = 25°C

during 4-time boosting

94

%

C1, C2, C3, CO = 10 μF (tantalum)

FC = VDD,

= VI,

= VDD,

POFF1

POFF2

μA

VI = –5.0 V during no loading

130

220

Booster operation current

IOPR1

C1, C2, C3, CO = 10 μF (tantalum)

consumption 1

FC = VDD, POFF1 = VI, POFF2 = VDD,

VI = –3.0 V, Ta = 25°C during no loading

100

150

μA

C1, C2, C3, CO = 10 μF (tantalum)

FC = VI,

= VI,

= VDD,

POFF1

POFF2

μA

VI = –5.0 V during no loading

520

880

Booster operation current

IOPR2

C1, C2, C3, CO = 10 μF (tantalum)

consumption 2

FC = VI, POFF1 = VI, POFF2 = VDD,

VI = –3.0 V, Ta = 25°C during no loading

400

600

μA

C1, C2, C3, CO = 10 μF (tantalum)

Regulator operation

IOPVR

VRI = –20 V, RRV = 1 MΩ during

10

15

μA

current consumption

no loading

Static current

IQ

POFF1

= VI,

POFF2

= VI

5.0

μA

FC = VDD

Input leakage current

ILKI

Pins used:

POFF1

, POFF2, FC,

0.5

μA

TC1, TC2

Regulated output

0 < IREG < 20 mA

RSAT (*1)

RV = VDD

10

20

Ω

saturation resistance

Ta = 25°C

Regulated output

–20 V < VRI < –10 V, IREG = 1 mA

VR (*2)

VREG = –9 V

0.2

%/V

voltage stability

Ta = 25°C

2–20 EPSON

S1F70000 Series Technical Manual