S3F80P5_UM_ REV1.00 ELECTRICAL DATA
Minimun Instruction
Clock
1kHz
f
OSC
(Main Oscillator Frequency)
12345
Supply Voltage (V)
Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)
A: 1.65 V, 8 MHz
250 kHz
1MHz
1.5MHz
2 MHz 8 MHz
6 MHz
4 MHz
400 kHz
67
500 kHz
A
1 MHz
2 MHz
Figure 16-4. Operating Voltage Range of S3F80P5
Table 16-10. AC Electrical Characteristics for Internal Flash ROM
(TA = -25 °C to + 85 °C)
Parameter Symbol Conditions Min Typ Max Unit
Flash Erase/Write/Read Voltage Fewrv VDD 1.60 3.3 3.6 V
Programming Time (note1) Ftp 20
− 30 μS
Sector Erasing Time (note2) Ftp1 4
− 12 mS
Chip Erasing Time (note3) Ftp2
−
32 − 70 mS
Data Access Time FtRS VDD = 2.0 V – 250 − nS
Number of Writing/Erasing FNwe − 10,000 − − Times
Data Retention Ftdr − 10 − − Years
NOTES:
1. The programming time is the time during which one byte (8-bit) is programmed.
2. The Sector erasing time is the time during which all 128-bytes of one sector block is erased.
3. In the case of S3F80P5, the chip erasing is available in Tool Program Mode only.
16-11