Texas Instruments TMS320DM643 manual Write WRT Command, DDR2 WRT Command

Models: TMS320DM643

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2.4.5Write (WRT) Command

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Peripheral Architecture

2.4.5Write (WRT) Command

Prior to a WRT command, the desired bank and row are activated by the ACTV command. Following the WRT command, a write latency is incurred. Write latency is equal to CAS latency minus 1. All writes have a burst length of 8. The use of the DDR_DQM outputs allows byte and halfword writes to be executed.

Figure 9 shows the timing for a write on the DDR2 memory controller.

If the transfer request is for less than 8 words, depending on the scheduling result and the pending commands, the DDR2 memory controller can:

Mask out the additional data using DDR_DQM outputs

Terminate the write burst and start a new write burst

The DDR2 memory controller does not perform the DEAC command until page information becomes invalid.

Figure 9. DDR2 WRT Command

DDR_CLK

DDR_CLK

Sample

Write Latency

DDR_CKE

DDR_CS

DDR_RAS

DDR_CAS

DDR_WE

DDR_A[12:0] Figure 9. DDR2 WRT Command COL Manual background

DDR_BA[2:0] Manual backgroundBANK

DDR_A[10]

DDR_DQM[3:0] Manual backgroundDQM1 DQM2 DQM3 DQM4 DQM5 DQM6 DQM7 DQM8Manual background

DDR_D[31:0]

D0

D1

D2

D3

D4

D5

D6

D7

DDR_DQS[3:0]

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DDR2 Memory Controller

SPRU986B–November 2007

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Texas Instruments TMS320DM643 manual Write WRT Command, DDR2 WRT Command