Samsung M391B5773DH0, M391B5273DH0 specifications Jitter Notes

Page 33

Unbuffered DIMM

datasheet

Rev. 1.0

DDR3L SDRAM

17.1 Jitter Notes

Specific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.ex) tMRD = 4 [nCK] means; if one Mode Register Set command is registered at Tm, another Mode Register Set command may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.

Specific Note b These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition

edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not.

Specific Note c These parameters are measured from a data strobe signal (DQS, DQS) crossing to its respective clock signal (CK, CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.

Specific Note d These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective data strobe signal (DQS, DQS) crossing.

Specific Note e For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] / tCK(avg) [ns] }, which is in clock cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 6, as long as the input clock jitter specifications are met, i.e. Precharge com- mand at Tm and Active command at Tm+6 is valid even if (Tm+6 - Tm) is less than 15ns due to input clock jitter.

Specific Note f When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper),act of the input clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = - 172 ps and tERR(mper),act,max = + 193 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(mper),act,max = - 400 ps - 193 ps = - 593 ps and tDQSCK,max(der- ated) = tDQSCK,max - tERR(mper),act,min = 400 ps + 172 ps = + 572 ps. Similarly, tLZ(DQ) for DDR3-800 derates to tLZ(DQ),min(derated) = - 800 ps - 193 ps = - 993 ps and tLZ(DQ),max(derated) = 400 ps + 172 ps = + 572 ps. (Caution on the min/max usage!)

Note that tERR(mper),act,min is the minimum measured value of tERR(nper) where 2 <= n <= 12, and tERR(mper),act,max is the maximum measured value of tERR(nper) where 2 <= n <= 12.

Specific Note g When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR3-800 SDRAM has tCK(avg),act = 2500 ps, tJIT(per),act,min = - 72 ps and tJIT(per),act,max = + 93 ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),act,min = 0.9 x tCK(avg),act + tJIT(per),act,min = 0.9 x 2500 ps - 72 ps = + 2178 ps. Similarly, tQH,min(derated) = tQH,min + tJIT(per),act,min = 0.38 x tCK(avg),act + tJIT(per),act,min = 0.38 x 2500 ps - 72 ps = + 878 ps. (Caution on the min/ max usage!)

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Contents Datasheet History Draft Date RevTable Of Contents Address Configuration Key FeaturesDDR3L Unbuffered Dimm Ordering Information Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 UnitPin Front Back X72 Dimm Pin Configurations Front side/Back sidePin Description SPD and Thermal Sensor for ECC UDIMMsPin Name Description Input/Output Functional Description Symbol Type FunctionAddress Mirroring Feature Dram Pin Wiring MirroringConnector Pin Dram Pin Rank SCL SDA Event SA0 SA1 SA2 Function Block DiagramD14 Absolute Maximum Ratings Dram Component Operating Temperature RangeAC & DC Operating Conditions Absolute Maximum DC RatingsAC & DC Input Measurement Levels 11.1 AC & DC Logic Input Levels for Single-ended SignalsVIH.DQDC90 Illustration of Vrefdc tolerance and Vref ac-noise limits Vref TolerancesAC and DC Logic Input Levels for Differential Signals Differential Signals Definition35V TBD Time Single-ended Requirements for Differential SignalsCK, DQS Vsel Differential Input Cross Point VoltageSlew rate definition for Differential Input Signals Slew Rate Definition for Single Ended Input SignalsAC & DC Output Measurement Levels Single Ended AC and DC Output LevelsSRQse Single-ended Output Slew RateDifferential output slew rate definition Differential Output Slew RateSymbol Description IDD specification definitionDatasheet IDD Spec Table DDR3-1066 DDR3-1333 DDR3-1600 Symbol 11-11-11 UnitM391B5773DH0 2GB256Mx72 Module M391B5273DH0 4GB512Mx72 ModuleCZQ Input/Output CapacitanceRefresh Parameters by Device Density Electrical Characteristics and AC timingDDR3-1066 Speed Bins DDR3-1600 Speed Bins CL-nRCD-nRP Speed Bin Table NotesDatasheet Timing Parameters by Speed Bin Timing Parameters by Speed GradeMIN MAX Reset Timing Jitter Notes ZQCorrection TSens x Tdriftrate + VSens x Vdriftrate Timing Parameter Notes18.1 256Mbx8 based 256Mx72 Module 1 Rank M391B5773DH0 Physical Dimensions18.2 256Mbx8 based 512Mx72 Module 2 Ranks M391B5273DH0
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