Cypress CY8CNP102B, CY8CNP102E - page 27

PRELIMINARY CY8CNP102B, CY8CNP102E
Document #: 001-43991 Rev. *D Page 27 of 38
DC Programming Specifications
Table 32. 5V DC Programming Specifications (CY8CNP102E)
Symbol Description Min Typ Max Units Notes
IDDPV Supply Current During Programming or Verify –10 30 mA
VILP Input Low Voltage During Programming or Verify – – 0.8 V
VIHP Input High Voltage During Programming or Verify 2.2 – – V
IILP Input Current when Applying Vilp to P1[0] or
P1[1] During Programming or Verify
– – 0.2 mA Driving internal pull
down resistor.
IIHP Input Current when Applying Vihp to P1[0] or
P1[1] During Programming or Verify
– – 1.5 mA Driving internal pull
down resistor.
VOLV Output Low Voltage During Programming or
Verify
– – Vss + 0.75 V
VOHV Output High Voltage During Programming or
Verify
Vcc - 1.0 –Vcc V
FlashENPB Flash Endurance (per block) 50,000 – – – Erase/write cycles per
block.
FlashENT Flash Endurance (total)[3] 1,800,000 – – – Erase/write cycles.
FlashDR Flash Data Retention 10 – – Year s
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