PRELIMINARY CY8CNP102B, CY8CNP102E

In the following table, tHRECALL starts from the time Vcc rises above VSWITCH. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE takes place. Industrial grade devices require 15 ms maximum.

Table 34. 5V nvSRAM AutoStore/Power Up RECALL (CY8CNP102E)

Parameter

 

Description

 

 

 

 

 

nvSRAM

 

Unit

 

 

 

 

 

Min

 

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

tHRECALL

 

Power Up RECALL Duration

 

 

 

 

 

 

 

20

 

ms

tSTORE

 

STORE Cycle Duration

 

 

 

 

 

 

 

12.5

 

ms

VSWITCH

 

Low Voltage Trigger Level

 

 

 

 

 

 

 

4.4

 

V

tVccRISE

 

VCC Rise Time

 

 

 

 

150

 

 

 

 

μs

AC General Purpose IO Specifications

 

 

 

 

 

 

 

 

 

 

Table 35. 5V AC GPIO Specifications (CY8CNP102E)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

 

Description

Min

Typ

 

Max

Units

 

Notes

FGPIO

 

GPIO Operating Frequency

0

 

12.3

MHz

Normal Strong Mode

TRiseF

 

Rise Time, Normal Strong Mode, Cload = 50 pF

3

 

18

ns

Vcc = 4.75V to 5.25V

 

 

 

 

 

 

 

 

 

 

 

10% - 90%

 

 

TFallF

 

Fall Time, Normal Strong Mode, Cload = 50 pF

2

 

18

ns

Vcc = 4.75V to 5.25V

 

 

 

 

 

 

 

 

 

 

 

10% - 90%

 

 

 

 

 

Figure 7. GPIO Timing Diagram

 

 

 

 

 

 

90%

GPIO

Pin

Output

Voltage

10%

TRiseF

TFallF

TRiseS

TFallS

Document #: 001-43991 Rev. *D

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Cypress CY8CNP102B, CY8CNP102E manual Gpio Operating Frequency, MHz Normal Strong Mode TRiseF, Vcc = 4.75V to, TFallF