Datasheet 43
Networking Silicon — 82555
11.0 Electrical Specifications and Timing Parameters

11.1 Absolute Maximum Ratings

11.2 General Operating Conditions

11.3 DC Characteristics

11.3.1 MII DC Characteristics

11.3.2 10BASE-T Voltage/Current DC Characteristics

Symbol Parameter Description Min Typ Max Units
TCCase temperature under bias 0 85 C
TSStorage temperature -65 140 C
VSUP Supply voltage -0.5 7.0 V
VOAa
a. Str esses above the listed under absolute maximum ratings may cause permanent damage to the
device. This is a stress rating only and functional operations of the device a t these or any other
conditions above those indicated in the operational sections of this specification is not impli ed. Ex-
posure to absolute maximum rating conditions for extended periods may affect device reliability.
All output voltages -0.5 7.0 V
VOTD Transmit Data Output Voltage -0.5 8.0 V
VIA All input voltages -1.0 6.0 V
Symbol Parameter Description Min Typ Max Units
VCC Supply voltage 4.75 5.25 V
TCCase temperature 0 85 C
Symbol Parameter Description Condition Min Typ Max Units
VIL Input low voltage (TTL) 0 0.8 V
VIH Input high voltage (TTL) 2.0 V
VOL Output low voltage Iout = 4 mA 0.45 V
VOH Output high voltage Iout = -4 mA 2.4 V
IIL Input low leakage current 0 < Vin < VCC ±15 µA
CINa
a. This pa rameter is only characterized, not tested. It is valid for digital pins only.
Input capacitance 10 pF
Symbol Parameter Description Condition Min Typ Max Units
RID10aInput differential resistance DC and VRDP =
(VCC/2) + 0.5 V 10 K