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Architecture

2.5.6.2Connecting to NAND Flash

Figure 8 shows the EMIF external pins used to interface with a NAND Flash device. EMIF address lines are used to drive the NAND Flash device'scommand latch enable (CLE) and address latch enable (ALE) signals.

NOTE: The EMIF will not control the NAND Flash device'swrite protect pin. The write protect pin must be controlled outside of the EMIF.

Figure 8. EMIF to NAND Flash Interface

EMIF

CLE_EM_A[16] ALE_EM_A[17] EM_CS[n]

EM_WE

EM_OE EM_D[7:0] EM_WAIT[n]

NAND flash

CLE

ALE

CE

WE

OE

IO[7:0]

R/B

a) Connection to 8-bit NAND device

EMIF

CLE_EM_A[16]

ALE_EM_A[17] EM_CS[n] EM_WE EM_OE EM_D[15:0] EM_WAIT[n]

NAND flash

CLE

ALE

CE

WE

OE

IO[15:0]

R/B

b) Connection to 16-bit NAND device

2.5.6.3Driving CLE and ALE

As stated in Section 2.5.1, the EMIF always drives the least significant bit of a 32-bit word address on EM_A[0]. This functionality must be considered when attempting to drive the address lines connected to CLE and ALE to the appropriate state.

For example, if using EM_A[2] and EM_A[1] to connect to CLE and ALE, respectively, the following offsets should be chosen:

00h to drive CLE and ALE low

10h to drive CLE high and ALE low

0Bh to drive CLE low and ALE high

These offsets should be added to the base address for the chip select space the NAND Flash device is connected to. For example, if the base address of the CS space the NAND Flash device is connected to is 4200 0000h, then the above list translates to the following memory-mapped addresses: 4200 0000h, 4200 0010h, and 4200 000Bh, respectively. Therefore, when attempting to drive CLE high and ALE low, the memory-mapped address of 4200 0010h would be written to.

SPRUEQ7C –February 2010

Asynchronous External Memory Interface (EMIF)

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Texas Instruments TMS320DM646X DMSOC manual Connecting to Nand Flash, Driving CLE and ALE