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Use Cases

3.2.3Example Using Hynix HY27UA081G1M

This section takes you through the configuration steps required to implement Hynix’s HY27UA081G1M NAND Flash with the EMIF. The following assumptions are made:

NAND Flash is connected to chip select space 2 (EM_CS[2])

EMIF clock speed is 100 MHZ (tcyc = 10 nS)

Table 28 lists the data sheet specifications for the EMIF and Table 29 lists the data sheet specifications for the NAND Flash.

Table 28. EMIF Timing Requirements for HY27UA081G1M Example

Parameter

Description

Min

Max

Units

tSU

Data Setup time, data valid before

 

 

high

5

 

nS

EM_OE

 

tH

Data Hold time, data valid after

 

 

high

0

 

nS

EM_OE

 

Table 29. NAND Flash Timing Requirements for HY27UA081G1M Example

Parameter

Description

Min

Max

Units

tRP

Read Pulse width

60

 

nS

tREA

Read Enable Access time

 

60

nS

tCEA

Chip Enable low to output valid

 

75

nS

tCHZ

Chip Enable high to output High-impedance

 

20

nS

tRC

Read Cycle time

80

 

nS

tRHZ

Read Enable high to output High-impedance

 

30

nS

tCLR

Command Latch low to Read enable low

10

 

nS

tWP

Write Pulse width

60

 

nS

tCLS

CLE Setup time

0

 

nS

tALS

ALE Setup time

0

 

nS

tCS

 

Setup time

0

 

nS

CS

 

tDS

Data Setup time

20

 

nS

tCLH

CLE Hold time

10

 

nS

tALH

ALE Hold time

10

 

nS

tCH

 

Hold time

10

 

nS

CS

 

tDH

Data Hold time

10

 

nS

tWC

Write Cycle time

80

 

nS

SPRUEQ7C –February 2010

Asynchronous External Memory Interface (EMIF)

45

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Texas Instruments TMS320DM646X DMSOC Example Using Hynix HY27UA081G1M, Emif Timing Requirements for HY27UA081G1M Example