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3.2.3 Example Using Hynix HY27UA081G1MThis section takes you through the configuration steps required to implement Hynix’s HY27UA081G1MNAND Flash with the EMIF. The following assumptions are made: NAND Flash is connected to chip select space 2 (EM_CS[2])
EMIF clock speed is 100 MHZ (tcyc = 10 nS)
Table 28 lists the data sheet specifications for the EMIF and Table 29 lists the data sheet specificationsfor the NAND Flash.Table 28. EMIF Timing Requirements for HY27UA081G1M Example
Parameter Description Min Max Units
tSU Data Setup time, data valid before EM_OE high 5 nS
tHData Hold time, data valid after EM_OE high 0 nS
Table 29. NAND Flash Timing Requirements for HY27UA081G1M Example
Parameter Description Min Max Units
tRP Read Pulse width 60 nS
tREA Read Enable Access time 60 nS
tCEA Chip Enable low to output valid 75 nS
tCHZ Chip Enable high to output High-impedance 20 nS
tRC Read Cycle time 80 nS
tRHZ Read Enable high to output High-impedance 30 nS
tCLR Command Latch low to Read enable low 10 nS
tWP Write Pulse width 60 nS
tCLS CLE Setup time 0 nS
tALS ALE Setup time 0 nS
tCS CS Setup time 0 nS
tDS Data Setup time 20 nS
tCLH CLE Hold time 10 nS
tALH ALE Hold time 10 nS
tCH CS Hold time 10 nS
tDH Data Hold time 10 nS
tWC Write Cycle time 80 nS
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SPRUEQ7C–February 2010 Asynchronous External Memory Interface (EMIF)
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