Cypress CY8CNP102E Power Up Recall Duration, Store Cycle Duration 12.5, Low Voltage Trigger Level

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PRELIMINARY CY8CNP102B, CY8CNP102E

In the following table, tHRECALL starts from the time Vcc rises above VSWITCH. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE occurs. Industrial grade devices require 15 ms maximum.

Table 15.3.3V nvSRAM AutoStore/Power Up RECALL (CY8CNP102B)

Parameter	Description				nvSRAM					Unit
Parameter	Description	Min				Max				Unit
		Min				Max
tHRECALL	Power Up RECALL Duration				20					ms
tSTORE	STORE Cycle Duration				12.5					ms
VSWITCH	Low Voltage Trigger Level				2.65					V
tVccRISE	VCC Rise Time	150								μs
AC General Purpose IO Specifications
Table 16. 3.3V AC GPIO Specifications (CY8CNP102B)

Symbol	Description	Min	Typ			Max		Units		Notes
FGPIO	GPIO Operating Frequency	0	–			12.3		MHz	Normal Strong Mode
TRiseS	Rise Time, Slow Strong Mode, Cload = 50 pF	10	27			–		ns	Vcc = 3V to 3.6V
									10% - 90%
TFallS	Fall Time, Slow Strong Mode, Cload = 50 pF	10	22			–		ns	Vcc = 3V to 3.6V
									10% - 90%

Figure 6. GPIO Timing Diagram

90%

GPIO

Pin

Output

Voltage

10%

TRiseF	TFallF
TRiseS	TFallS

Document #: 001-43991 Rev. *D

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Contents Features OverviewLogic Block Diagram Pinouts GpioENW NVA2 NVWNVA1 ENA1NvSRAM Data Memory PSoC NV Functional OverviewPSoC NV Core NvSRAM OperationProgrammable Digital System Programmable Analog SystemAdditional System Resources Development Tools PSoC Designer Software SubsystemsEsigner Designing with User Modules Hardware ToolsUser Module and Source Code Development Flows Microhenry Picosecond Microsecond Cypress nvSRAM user ModuleParts per million Samples per secondAbsolute Maximum Ratings Operating Temperature3V Operation ESDDC Electrical Characteristics Cmrroa PsrroaPsrr OB Agnd = BandGap1 Agnd = 1.6 x BandGap1 DC Analog Reference SpecificationsCapacitor Unit Value Switch Cap Resistor Unit Value Continuous TimePORLEV10 = 00b Ppor Hysteresis Vdd Value for Ppor Trip positive rampPORLEV10 = 00b Vdd Value for Ppor Trip negative ramp PORLEV10 = 00bDriving internal pull Supply Current During Programming or VerifyInput Low Voltage During Programming or Verify During Programming or Verify Down resistorAC Electrical Characteristics DC24MStore Cycle Duration 12.5 Power Up Recall DurationGpio Operating Frequency 12.3 MHz Normal Strong Mode TRiseS Low Voltage Trigger LevelBwoa Spis CrcprsSpim BwobSetup Time for a Repeated Start Condition Data Set up Time to Falling Edge of SclkData Out Delay from Falling Edge of Sclk 0V ≤ Vcc ≤ Data Hold Time Data Setup Time5V Operation Combined IOH budget Capacitive Load on Pins as Input Pin dependent. Temp = 25oCHigh Output Level Vcc Input Low Level 75 toLow power comparator LPC reference voltage range Vcc Input Leakage Current Port 0 Analog PinsGross tested to 1 μA Input Capacitance Port 0 Analog Pins Average Input Offset Voltage DriftPsrrob VM20 = 011b PORLEV10 = 10b Vdd Value for Ppor Trip negative rampPORLEV10 = 10b Ppor Hysteresis VM20 = 100bOutput Low Voltage During Programming or VerifyBlock See on Using factory trim valuesMHz Trimmed for 5V operation Internal Main Oscillator Frequency for 6 MHzVcc = 4.75V to MHz Normal Strong Mode TRiseFGpio Operating Frequency TFallFMaximum Frequency 49.2 MHz 75V ≤ Vcc ≤ Sions Transmitter Maximum Input Clock Frequency 24.6 MHz Maximum Input Clock Frequency 24.6 MHz 75V ≤ Vcc ≤ CRC ModeMHz due to 2 Over clocking Vcc ≥ 4.75V, 2 Stop Bits MHz due to 8 Over clocking 49.2Data Out Delay from Falling Edge of Sclk 75V ≤ Vcc ≤ Switching Waveforms A b l eExternal Crystal Oscillator Startup Timing Diagram L e c tCY8CNP102B-AXI Part Numbering NomenclatureOrdering Information CY8CNP102E-AXITqfp Package DiagramsThermal Impedance 81 oC/WDocument History PyrsGVCH/PYRS Sales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB