User Manual version 2207

uSDRAM/VCM CAS LATENCY

When synchronous DRAM is installed, the number of clock cycles of CAS latency depends on the DRAM timing.

The Choice: 2, 3 or SPD

uSDRCLK CONTROL

This item controls the phase of SDRCLK that lags behind

SDCLK.

The choice: Enabled or Disabled.

uSDWCLK CONTROL CS#/CKE

This item controls the phase of SDWCLK used for chip set select signals pin that lags ahead SDCLK.

The choice: Enabled or Disabled.

uSDWCLK CONTROL MA/SRAS

This item controls the phase of SDWCLK used for MA/ SRAS signals that lags ahead SDCLK.

The choice: +5.0ns~-2.5ns (Default 0.0ns)

uSDWCLK CONTROL DQM/MD

This item controls the phase of SDWCLK used for DQM/MD signals that lags ahead SDCLK.

The choice: +5.0ns~-2.5ns (Default 0.0ns)

uEGMRCLK CONTROL

This item controls the phase of EGMRCLK that lags behind

SDCLK.

The choice: -1.0ns~+6.5ns (Default 0.0ns)

uEGMWCLK CONTROL

This item controls the phase of EGMWCLK that lags ahead

SDCLK.

The choice: +5.0ns~-2.5ns (Default 0.0ns)

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APOLLO 120/150 III

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Image 128
Apollo 150 SDRAM/VCM CAS Latency, Sdrclk Control, Sdwclk Control CS#/CKE, Sdwclk Control MA/SRAS, Sdwclk Control DQM/MD