PRELIMINARY

 

 

 

 

 

 

If you are looking for in-

Turn to these locations:

 

formation about:

 

 

 

 

 

Over-erasure (depletion) and

Section 1.1, Basic Concepts of Flash Memory

 

recovery

Technology

 

 

Section 2.7, Recovering From Over-Erasure

 

 

(Flash-Write Operation)

 

 

Section 3.4, Flash-Write Algorithm

 

Programming the flash array

Section 1.1, Basic Concepts of Flash Memory

 

 

Technology

 

 

Section 2.1, Modifying the Contents of the

 

 

TMS320F20x/F24x Flash Array

 

 

Section 2.5, Program Operation

 

 

Section 3.2, Programming Algorithm

 

Sample code

Appendix A, Assembly Source Listings and

 

 

Program Examples

 

 

 

 

 

Notational Conventions

This document uses the following conventions.

-The flash EEPROM is referred to as flash memory or the flash module. The term flash array refers to the actual memory array within the flash module. The flash module includes the flash memory array and the associ- ated control circuitry.

-The DSP generation and devices are abbreviated as follows:

￿TMS320F20x/24x generation: 'F20x/24x

￿TMS320F20x devices: 'F20x

￿TMS320F24x devices: 'F24x

-Program listings and code examples are shown in a special type- face.

Here is a sample program listing:

0011

0005

0001

.field

1, 2

0012

0005

0003

.field

3,

4

0013

0005

0006

.field

6,

3

0014

0006

 

.even

 

 

iv

PRELIMINARY

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Texas Instruments TMS320F20x/F24x DSP manual Preliminary