Texas Instruments TMS320F20x/F24x DSP manual Preliminary

	PRELIMINARY
If you are looking for in-	Turn to these locations:
formation about:
Over-erasure (depletion) and	Section 1.1, Basic Concepts of Flash Memory
recovery	Technology
	Section 2.7, Recovering From Over-Erasure
	(Flash-Write Operation)
	Section 3.4, Flash-Write Algorithm
Programming the flash array	Section 1.1, Basic Concepts of Flash Memory
	Technology
	Section 2.1, Modifying the Contents of the
	TMS320F20x/F24x Flash Array
	Section 2.5, Program Operation
	Section 3.2, Programming Algorithm
Sample code	Appendix A, Assembly Source Listings and
	Program Examples

Notational Conventions

This document uses the following conventions.

-The flash EEPROM is referred to as flash memory or the flash module. The term flash array refers to the actual memory array within the flash module. The flash module includes the flash memory array and the associ- ated control circuitry.

-The DSP generation and devices are abbreviated as follows:

￿TMS320F20x/24x generation: 'F20x/24x

￿TMS320F20x devices: 'F20x

￿TMS320F24x devices: 'F24x

-Program listings and code examples are shown in a special type- face.

Here is a sample program listing:

0011	0005	0001	.field	1, 2
0012	0005	0003	.field	3,	4
0013	0005	0006	.field	6,	3
0014	0006		.even

iv PRELIMINARY