PRELIMINARY

Index

M

margin

 

 

determining

3-5, 3-11

 

ensuring data retention 1-2

 

improving

3-12

 

in programming 2-13

 

restoring after flash±write operation 2-15

special read modes for ensuring

2-12

masking data in program operation

3-8

memory maps

1-4

 

MODE bit 2-6

See also flash access±control register

mode selection for access

2-6

modifying the array contents

2-2, 2-16

module±control register 2-8

multiple reads at same location 3-5, 3-17

N

notational conventions iv

O

OUT instruction 2-7 over±erasure 2-14, 2-15, 3-14

P

program operation

 

 

 

described

2-13

 

 

 

frequency range

3-5

 

 

latching the write address

2-10

latching the write data 2-11

 

logic levels

2-4

 

 

 

masking off upper or lower bits

2-13

specifying write address

2-13

 

VER0 read mode

2-13

 

 

verification of programmed bits

2-12

worst±case voltage for reading programmed

cell

2-12

 

 

 

program pulse

 

 

 

 

applying a series

3-8

 

 

defined

2-13

 

 

 

program() function (code listing)

A-27

programming algorithm

assembly code (SPGM2x.ASM) A-19

described 3-4 to 3-9

flow diagram

3-6

in overall flow

3-4

versus clear algorithm 3-2

programming the flash memory. See program opera- tion

protection from unintentional erasure 2-16, 3-11

R

read mode, standard

2-12

read modes 2-12

 

reading from the array

2-16

recovery from over±erasure 2-15

register±access mode

2-5, 2-10, 2-11

See also array±access mode

related documentation

v

reprogrammability 1-1, 2-14, 2-15, A-1

reserving space for code A-2

retention of data. See data retention

S

SCLR2x.ASM file A-5

 

 

 

 

 

segment control register (SEG_CTR)

2-8

 

described

2-8

 

 

 

 

 

 

in erase operation

2-14

 

 

 

 

 

in flash±write operation

2-15

 

 

 

in mechanism for array protection

2-16

 

in mode selection

2-6

 

 

 

 

 

in program operation 2-13

 

 

 

 

relation to flash±write pulse

3-14

 

 

role in single erase pulse

3-11

 

 

 

role in single flash±write pulse

3-15

 

role in single program pulse

3-8

 

 

segment enable bits (SEG0±SEG7)

 

 

described

2-9

 

 

 

 

 

 

in mechanism for array protection

2-16

 

location in SEG_CTR register

 

2-8

 

 

role in single erase pulse

3-11

 

 

 

role in single flash±write pulse

3-15

 

role in single program pulse

3-8

 

 

segment locations in array

2-10

 

 

 

SERA2x.ASM file (erase algorithm code) A-10

SFLW2x.ASM file (flash±write algorithm code

A-15

space for code

A-2

 

 

 

 

 

 

SPGM2x.ASM file (program algorithm code)

A-19

PRELIMINARY

Index-3

Page 107
Image 107
Texas Instruments TMS320F20x/F24x DSP manual Margin