Texas Instruments TMS320C642x DSP DDR2 READ Command, DDRBA20 BANK DDRA10 DDRDQM30 CAS Latency

Models: TMS320C642x DSP

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2.4.4READ Command

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Peripheral Architecture

2.4.4READ Command

Figure 8 shows the DDR2 memory controller performing a read burst from DDR2 SDRAM. The READ command initiates a burst read operation to an active row. During the READ command, DDR_CAS drives low, DDR_WE and DDR_RAS remain high, the column address is driven on DDR_A[12:0], and the bank address is driven on DDR_BA[2:0].

The DDR2 memory controller uses a burst length of 8, and has a programmable CAS latency of 2, 3, 4, or

5.The CAS latency is three cycles in Figure 8. Read latency is equal to CAS latency plus additive latency. The DDR2 memory controller always configures the memory to have an additive latency of 0, so read latency equals CAS latency. Since the default burst size is 8, the DDR2 memory controller returns 8 pieces of data for every read command. If additional accesses are not pending to the DDR2 memory controller, the read burst completes and the unneeded data is disregarded. If additional accesses are pending, depending on the scheduling result, the DDR2 memory controller can terminate the read burst and start a new read burst. Furthermore, the DDR2 memory controller does not issue a DAB/DEAC command until page information becomes invalid.

Figure 8. DDR2 READ Command

DDR_CLK

DDR_CLK

DDR_CKE

DDR_CS

DDR_RAS

DDR_CAS

DDR_WE

DDR_A[12:0] Figure 8. DDR2 READ CommandCOL DDR_CLK

DDR_BA[2:0] DDR_BA[2:0]  BANK BANK DDR_D[31:0]

DDR_A[10]

DDR_DQM[3:0]

CAS Latency

DDR_D[31:0]

D0

D1

D2

D3

D4

D5

D6

D7

DDR_DQS[3:0]

SPRUEM4A–November 2007

DDR2 Memory Controller

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Texas Instruments TMS320C642x DSP manual DDR2 READ Command, DDRCLK DDRCLK DDRCKE DDRCS DDRRAS DDRCAS DDRWE DDRA120 COL