AC Electrical Characteristics
Electrical Characteristics 19-31

Table 19-16. Timing Parameters for Figure19-15 Through Figure 19-26

Number Characteristic (3.0 ± 0.3) V Unit
Minimum Maximum
1 Clock high pulse time 12 —ns
2 Clo ck low pulse time 13 ns
3 Clock high to address valid 3 13 ns
4 Clo ck high to chip-select 3 12 ns
5 Read to data sample latency CAS latency CLK
6 Clo ck h igh to CAS asserted 3 12 ns
7 Clock high to SCKEN asserted 8 12 ns
8 Clo ck h igh to RAS asserted 3 12 ns
9 Self -refresh exit to active command asserted 4 (7)* CLK
10 Clock high to WE asserted 3 12 ns
11 Precharge command to active command 1 (2)** CLK
12 Clock high to DQM asserted 3 12 ns
13 DQM width asserted 28 ns
14 Clock high to DTACK asserted 10 ns
15 Active command to read/write command 1 (2)** CLK
16 Data setup time 13 ns
17 Data valid to clock high 10 ns
* Note: The value inside the parentheses is used if the value of bit RACL of the SDRAM control register is 1.
** Note: The value inside the parentheses is used if the value of bit CL of the SDRAM control register is 1.