Si53xx-RM

4. Device Specifications

The following tables are intended to simplify device selection. The specifications in the individual device data sheets take precedence over this document. Refer to the respective device data sheet for devices not listed in the tables below.

Table 3. Recommended Operating Conditions1

Parameter

Symbol

Test Condition

Si5316

Si5322

Si5324

Si5325

Si5365

Si5366

Si5367

Si5368

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ambient

TA

 

–40

25

85

ºC

Temperature

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply Voltage

VDD

3.3 V Nominal

Note 2

Note 2

Note 2

Note 2

2.97

3.3

3.63

V

During Normal

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5 V Nominal

2.25

2.5

2.75

V

Operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.8 V Nominal

1.71

1.8

1.89

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

1.All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 ºC unless otherwise stated.

2.See Sections 6.7.1 and 8.2.1 for restrictions on output formats for TQFP devices at 3.3 V.

SIGNAL +

 

V

 

 

 

 

Differential I/Os

V

, V

V

, V

 

ICM

 

OCM

ISE

OSE

SIGNAL –

 

 

 

(SIGNAL +) – (SIGNAL –)

 

VID,VOD

 

VICM, VOCM

 

 

 

 

t

 

 

 

 

 

SIGNAL +

 

 

 

SIGNAL –

 

 

 

Single-Ended

Peak-to-Peak Voltage

Differential Peak-to-Peak Voltage

VID = (SIGNAL+) – (SIGNAL–)

Figure 16. Differential Voltage Characteristics

CKIN, CKOUT

tF

80%

20%

tR

Figure 17. Rise/Fall Time Characteristics

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Silicon Laboratories SI5366 Device Specifications, Recommended Operating Conditions1, Parameter Symbol Test Condition