Si53xx-RM

Table 4. DC Characteristics (Continued)

Parameter

Symbol

Test Condition

Si5316

Si5322

Si5324

Si5325

Si5365

Si5366

Si5367

Si5368

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Mid Current

I

See note 2

–2

2

µA

 

IMM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input High Current

I

See note 2

20

µA

 

IHH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LVCMOS Output Pins

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage Low

VOL

IO = 2 mA

0.4

V

 

 

VDD = 1.62 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IO = 2 mA

0.4

V

 

 

VDD = 2.97 V

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage High

VOH

IO = –2 mA

VDD –

V

 

 

VDD = 1.62 V

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

IO = –2 mA

VDD –

V

 

 

VDD = 2.97 V

 

 

 

 

 

 

 

 

0.4

 

 

 

Tri-State Leakage

IOZ

 

 

= 0

–100

100

µA

 

RST

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.Refer to Section 6.7.1 and 8.2.1 for restrictions on output formats for TQFP devices at 3.3 V.

2.This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 55 on page 115.

3.No under- or overshoot is allowed.

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Silicon Laboratories SI5326, SI5369, SI5365, SI5366, SI5367, SI5374, SI5375, SI5327, SI5319, SI5368, SI5323 Lvcmos Output Pins, Rst