GE Energy Services
68K System Monitor
User's Guide
SWM0023 1.00 2 General
3-30 Full Release
E - Edit Memory
Platform þCPM þD20
D20 Base þD20 ME
D20 Base þD20/200
CCU Base þD20/200 ME
CCU Base þD25
Use this command to display and modify memory locations. The command does not
verify memory contents after they are stored. After entering the command, it
prompts you with the current contents of a memory location.
The different display and edit formats supported are:
bytes
words
floating-point numbers
scientific format
double-precision numbers
hexadecimal format
hexadecimal format
hexadecimal format
scientific format
scientific format
Description
When the contents of the memory location appear, type:
a new value to store at the location
a hyphen (-) to back up one location
a plus sign (+) or the ENTER key to move forward one location (CCU / D25 only)
a period (.) to exit this function
Scientific values must subscribe to the following format:
[±] mantissa [e [±] exponent]
The mantissa can contain a decimal point. This command differentiates between a
negative number and a hyphen.
Syntax Below is usage and syntax information for this command
Command Format CPM / D20: e [/(b | w | l | f | d)] address
CCU / CCUME / D25: e [/(b | w | l | f | d)] [/x] address
Variables /b = bytes (octets), the default mode
/w = words
/l = long words
/f = floating-point numbers
/d = double-precision numbers
/x = do not display existing contents of memory
location being edited
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