19-6 MC68VZ328 User’s Manual

AC Electrical Characteristics
19.3.4 Chip-Select Flash Write Cycle Timing

Figure 19-4 on page19-7 shows the flash write cycle timing used by chip-select. The signal values and

units of measure for this figure are found in Table19-6 on page 19-7. For detailed information about the

individual signals, see Chapter6, “Chip-Select Logic.”

Table 19-5. Chip-Select Write Cycle Timing Parameters

Number Characteristic (3.0 ± 0.3)V Unit
Minimum Maximum
1 Address valid to CSx asserted
(bit ECDS= 0, bit ECDS =1) 20, 20 -T/2 —ns
2CSx
asserted to UWE/LWE asserted 0 4 ns
3CSx
asserted to data-out valid 30 ns
4 External DTACK input setup from CSx asserted 20 + nT ns
5CSx
pulse width
(bit ECDS= 0, bit ECDS =1) 60 + nT,
(60+ T/2) + nT —ns
6UWE/LWE negated before CSx is negated 10 20 ns
7 External DTACK input hold after CSx is negated 0 ns
8 Data-out hold after CSx is negated 8 ns
9CSx
negated to data-out in Hi-Z 18 ns
10 CSx asserted to WE asserted (16-bit SRAM) 0 4 ns
11 WE negated before CSx is negated (16-bit SRAM) 10 20 ns
Note:
n is the number of wait-states in the current memory access cycle.
T is the system clock period.
The external DTACK input requirement is eliminated when CSx is programmed to use the internal DTACK.
CSx stands for CSA0, CSA1, CSB0, CSB1, CSC0, CSC1, CSD0, or CSD1.
A value in parentheses is used when early detection is turned on.