Datasheet 29
Electrical Specifications
2.6.3 FSB DC Specifications

The processor front side bus DC specifications in this section are defined at the processor core

(pads) unless otherwise stated. All specifications apply to all frequencies and cache sizes unless

otherwise stated.

Table 2-10. BSEL[2:0] and VID[5:0] Signal Group DC Specifications

Symbol Parameter Max Unit Notes1, 2
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. These parameters are not tested and are based on design simulations.
RON (BSEL) Buffer On Resistance 60 Ω-
RON (VID) Buffer On Resistance 60 Ω-
IOL Max Land Current 8 mA -
ILO Output Leakage Current 200 µA 3
3. Leakage to VSS with land held at 2.5V.
VTOL Voltage Tolerance VTT (max) V -

Table 2-11. GTL+ Signal Group DC Specifications

Symbol Parameter Min Max Unit Notes1
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
VIL Input Low Voltage 0.0 GTLREF – (0.10 * VTT)V
2, 3
2. VIL is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. The VTT referred to in these specifications is the instantaneous VTT.
VIH Input High Voltage GTLREF + (0.10 * VTT)V
TT V3, 4, 5
4. VIH is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. VIH and VOH may experience excursions above VTT.
VOH Output High Voltage N/A VTT V3, 5
IOL Output Low Current N/A VTT/[(0.50*RTT_MIN) +
RON_MIN]A-
ILI Input Leakage Current N/A ± 200 µA 6
6. Leakage to VSS with land held at VTT.
ILO Output Leakage
Current N/A ± 200 µA 6
RON Buffer On Resistance 8 12 Ω