34 Board Manual
Intel® IQ80321 I/O Processor Evaluation Platform
Hardware Reference Section
3.4 Memory Subsystem
Memory subsystem consists of the SDRAM as well as the Flash memory subsystems.

3.4.1 DDR SDRAM

The DDR SDRAM interface consists of a 64-bit wide data path to support 1.6 GB/sec throughput. An
8-bit Error Correction Code (ECC) is stored in to the DDR SDRAM array along with the data and is
checked when the data is read.

3.4.1.1 Battery Backup

Battery backup is provided to save any informat ion in DDR during a power failure. The ev aluation
board contains a Li-ion battery, a charging circuit and a regulator circuit.
DDR technology provides enabling data pr eservation through the self-refresh comman d. When the
processor receives an active Primary PCI-X reset, the self-refresh comman d issues, driving SCKE
signals low. Upon seeing this condition, the board logic circuit ho lds SCKE low before the processor
loses power. Batteries maintain power to DDR and logic , to ensure self-refresh mode. When the
circuit detects PRST# returning to inactive state, the circuit relea ses the hold on SCKE. Removing the
battery can disable the battery circuit. When the battery remains in the platform when it is de-powered
and/or removed from the chas sis, the battery maintains DDR for about four hours. Once power is
reapplied, the battery is fully charged.
Table 8. DDR Memory Features
Description
The board features two banks of DDR SDRAM in the form of one two-bank dual inline memory module (DIMM), only Un-buffered
PC1600 DIMMs.
The Intel® IQ80321 Evalua tion Platform Board ha s a single DIMM connect or supporting the DIM M arrangements listed in Tabl e 9.
Table 9. Supported DIMM Types
Type Si ze Type S ize
DDR200 (PC1600) 8MX64 CL2DIMM (64 MB)
DDR200 16MX64 CL2 DIMM (128MB)
DDR200 32MX64 CL2 DIMM (256MB)
DDR200 8MX72 CL2 ECC DIMM (64 MB)
DDR200 16MX72 CL2 ECC DIMM (128MB)
DDR200 32MX72 CL2 ECC DIMM (256MB)
DDR200 (1 GB)