Texas Instruments MSP430x11x1 warranty Flash memory control register FCTL1

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MSP430x11x1

MIXED SIGNAL MICROCONTROLLER

SLAS241C ± SEPTEMBER 1999 ± REVISED JUNE 2000

flash memory

The flash memory consists of 512-byte segments in the main memory and 128-byte segments in the information memory. See device memory maps for specific device information.

Segment0 to Segment7 can be erased individually, or altogether as a group.

SegmentA and SegmentB can be erased individually, or as a group with segments 0±7.

The memory in SegmentA and SegmentB is also called Information Memory.

VPP is generated internally. VCC current increases during programming.

During program/erase cycles, VCC must not drop below the minimum specified for program/erase operation.

Program and erase timings are controlled by the flash timing generatorÐno software intervention is needed. The input frequency of the flash timing generator should be in the proper range and must be applied until the write/program or erase operation is completed.

0FFFFh

Segment0 w/

 

 

 

 

0FE00h

Interrupt Vectors

 

 

0FDFFh

 

 

 

Segment1

 

 

0FC00h

 

 

 

 

 

0FBFFh

 

 

Memory

Segment2

 

0FA00h

 

 

 

 

 

 

0F9FFh

 

 

 

Segment3

 

 

0F800h

 

Main

 

 

0F7FFh

 

 

Segment4

 

 

Flash

0F600h

 

 

 

 

 

 

0F5FFh

 

 

 

Segment5

 

 

0F400h

 

 

 

 

 

0F3FFh

 

 

 

Segment6

 

 

0F200h

 

 

 

 

 

0F1FFh

 

 

 

Segment7

 

 

0F000h

 

 

 

 

 

010FFh

 

 

Information Memory

SegmentA

 

 

 

01080h

 

 

 

 

 

0107Fh

 

 

 

SegmentB

 

 

 

 

01000h

 

 

 

 

 

 

 

 

 

NOTE: All segments not implemented on all devices.

During program or erase, no code can be executed from flash memory and all interrupts must be disabled by setting the GIE, NMIE, ACCVIE, and OFIE bits to zero. If a user program requires execution concurrent with a flash program or erase operation, the program must be executed from memory other than the flash memory (e.g., boot ROM, RAM). In the event a flash program or erase operation is initiated while the program counter is pointing to the flash memory, the CPU will execute JMP $ instructions until the flash program or erase operation is completed. Normal execution of the previously running software then resumes.

Unprogrammed, new devices may have some bytes programmed in the information memory (needed for test during manufacturing). The user should perform an erase of the information memory prior to first use.

flash memory control register FCTL1

All control bits are reset during PUC. PUC is active after VCC is applied, a reset condition is applied to the

RST/NMI pin, the watchdog timer expires, a watchdog access violation occurs, or an improper flash operation has been performed. A more detailed description of the control-bit functions is found in the flash memory module description (refer to MSP430x1xx User's Guide, literature number SLAU049). Any write to control register FCTL1 during erase, mass erase, or write (programming) will end in an access violation with ACCVIFG=1. Special conditions apply for segment-write mode. Refer to MSP430x1xx User's Guide, literature number SLAU049 for details.

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Contents MSP430x11x1 DescriptionTssop Functional block diagram Available Options Packaged DevicesPIN Sowb PIN Tssop Pulldown resistor of 30 k Ω is needed on F11x1Terminal Functions Short-form descriptionProcessing unit Terminal Description NameAddress Mode Descriptions CPUInstruction set Instruction Word FormatsLow-power consumption capabilities Operation modes and interruptsStatus register R2 SCG1SCG0 SCG1 SCG0Interrupt vector addresses CaifgWdtifg CCIFG1, CCIFG2, TaifgSpecial function registers WdtifgOfifg NmiifgBoot ROM containing bootstrap loader Functions of the bootstrap loaderMemory organization Features of the bootstrap loader are Hardware resources used for serial input/outputWDT VCC RST/NMI PIN Test PINBootstrap loader Starts VCCTest InternalFlash memory Flash memory control register FCTL1Flash memory, timing generator, control register FCTL2 Erase 0128h, bit1, Erase a segmentWRT Flash memory control register FCTL3 FN0±FN5SSEL0, SSEL1 AclkBusy KeyvAccvifg WaitFlash memory, interrupt and security key violation LockEmex Accv PUCPOR NmirsPeripherals Oscillator and system clockClock Signals Digital I/OWatchdog timer TimerA Three capture/compare registersTimerA 3 capture/compare registers TimerA, MSP430x11x1 ConfigurationComparatorA Caout CAFCACTL2.4 CATCTL2.7Slope a/d conversion CACTL1Caex Caon Caies Caifg Rsel REF1 REF0 CACTL2Peripherals with Word Access Peripherals with Byte AccessPeripheral file map Absolute maximum ratings² Recommended operating conditionsMIN NOM MAX Units MSP430x11x1 Devices Frequency vs Supply VoltageParameter Test Conditions MIN TYP MAX Unit IAMILPM2 ILPM3Outputs Port 1 to P2 P1.0 to P1.7, P2.0 to P2.5 Leakage currentInternal signals TAx, Smclk at TimerA Inputs Px.x, TAxParameter Test Conditions VCC MIN TYP MAX Unit Port P1, P2 P1.x to P2.xOutputs P1.x, P2.x, TAx ComparatorA see NoteVRefVT vs Temperature, VCC = 3 V, C1121 VRefVT vs Temperature, VCC = 2.2 V, C1121PUC/POR CAF CaonRAM Parameter MIN NOM MAX UnitDCO Variance MaxDcoclk DCO StepsPrinciple characteristics of the DCO Wake-up from lower power modes LPMxJTAG/programming Input/output schematic Port P1, P1.0 to P1.3, input/output with Schmitt-triggerGND P1DIR.4 P1OUT.4 Smclk P1IFG.4 P1IES.4P1DIR.5 P1OUT.5 P1IFG.5 P1IES.5Port P2, P2.0 to P2.2, input/output with Schmitt-trigger CAPD.XPort P2, P2.3 to P2.4, input/output with Schmitt-trigger P2DIR.3 P2OUT.3P2IFG.3 P1IES.3 P2DIR.4 P2OUT.4P2SEL.5 VCC P2DIR.5P2OUT.5 P2IRQ.5Port P2, unbonded bits P2.6 and P2.7 Pins DIM MAX DW R-PDSO-GPlastic SMALL-OUTLINE Package PIN ShownPins Shown Pins DIM MAX MINPW R-PDSO-G Plastic SMALL-OUTLINE Package 15 NOM Gage Plane Seating Plane 20 MAXImportant Notice