Motorola MC9S12DJ128B A.1.7 Operating Conditions, Table A-2 ESD and Latch-up Test Conditions

MC9S12DT128B Device User Guide — V01.07

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification.

Table A-2 ESD and Latch-up Test Conditions

Model	Description	Symbol	Value	Unit
	Series Resistance	R1	1500	Ohm
	Storage Capacitance	C	100	pF
Human Body
	Number of Pulse per pin		–
	positive	–	3
	negative		3
	Series Resistance	R1	0	Ohm
	Storage Capacitance	C	200	pF
Machine
	Number of Pulse per pin		–
	positive	–	3
	negative		3
Latch-up	Minimum input voltage limit		–2.5	V
	Maximum input voltage limit		7.5	V

Table A-3 ESD and Latch-Up Protection Characteristics

Num	C	Rating	Symbol	Min	Max	Unit
1	C	Human Body Model (HBM)	VHBM	2000	–	V
2	C	Machine Model (MM)	VMM	200	–	V
3	C	Charge Device Model (CDM)	VCDM	500	–	V
		Latch-up Current at 125°C	ILAT
4	C	positive		+100	–	mA
		negative		–100
		Latch-up Current at 27°C	ILAT
5	C	positive		+200	–	mA
		negative		–200

A.1.7 Operating Conditions

This chapter describes the operating conditions of the device. Unless otherwise noted those conditions apply to all the following data.

NOTE: Please refer to the temperature rating of the device (C, V, M) with regards to the ambient temperature TA and the junction temperature TJ. For power dissipation

86

http://www.xinpian.net 提供单片机解密、IC解密、芯片解密业务 010-62245566 13810019655