Motorola MC9S12DG128B manual A.3.2 NVM Reliability, Table A-12 NVM Reliability Characteristics

Models: MC9S12DT128B

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A.3.2 NVM Reliability

MC9S12DT128B Device User Guide — V01.07

4.Burst Programming operations are not applicable to EEPROM

5.Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.

6.Minimum time, if first word in the array is not blank

7.Maximum time to complete check on an erased block

A.3.2 NVM Reliability

The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process monitors and burn-in to screen early life failures.

The failure rates for data retention and program/erase cycling are specified at the operating conditions noted.

The program/erase cycle count on the sector is incremented every time a sector or mass erase event is executed.

NOTE: All values shown in Table A-12are target values and subject to further extensive characterization

Table A-12 NVM Reliability Characteristics

Conditions are shown in Table A-4unless otherwise noted

Num

C

Rating

Cycles

Data Retention

Unit

Lifetime

 

 

 

 

 

 

 

 

 

 

 

1

C

Flash/EEPROM (-40˚C to +125˚C)

10

15

Years

 

 

 

 

 

 

2

C

EEPROM (-40˚C to +125˚C)

10,000

5

Years

 

 

 

 

 

 

NOTE: Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is specified for 15 years.

NOTE: EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is specified for 5 years on words after cycling 10K times. However if only 10 cycles are executed on a word the data retention is specified for 15 years.

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Motorola MC9S12DG128B, MC9S12DT128B, MC9S12DB128B manual A.3.2 NVM Reliability, Table A-12 NVM Reliability Characteristics